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US 2026/0313882 A1Published application
Semiconductor device including capacitors, word line pads and word line contacts
AssigneeSamsung Electronics Co., Ltd.
InventorJeon Il Lee
Life of this patent
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Abstract
A semiconductor device includes a substrate, a plurality of semiconductor patterns on the substrate, spaced apart, a bit line connected to one side surfaces of the plurality of semiconductor patterns, a plurality of capacitors respectively connected to the other side surfaces of the plurality of semiconductor patterns, a plurality of word lines respectively crossing the plurality of semiconductor patterns, a plurality of word line pads overlapping the plurality of capacitors, and a plurality of word line contacts connected to at least some of the plurality of word line pads, the plurality of word line contacts being spaced apart, and the plurality of word line contacts having different lengths.
Claims20
A semiconductor device comprising:
- a substrate,
- a plurality of semiconductor patterns on the substrate, spaced apart in a direction substantially perpendicular to an upper surface of the substrate,
- a bit line connected to one side surfaces of the plurality of semiconductor patterns along a first direction and extending in a direction substantially perpendicular to the upper surface of the substrate,
- a plurality of capacitors respectively connected to other side surfaces of the plurality of semiconductor patterns along the first direction,
- a plurality of word lines respectively crossing the plurality of semiconductor patterns and extending in a second direction intersecting the first direction,
- a plurality of word line pads overlapping the plurality of capacitors in the second direction, and
- a plurality of word line contacts extending in a direction substantially perpendicular to the upper surface of the substrate;
- wherein at least some of the plurality of word line pads are respectively connected to the plurality of word line contacts,
- wherein the plurality of word line contacts are spaced apart in the first direction, and
- wherein the plurality of word line contacts have different lengths along the direction substantially perpendicular to the upper surface of the substrate.
7 more elements
A semiconductor device comprising:
- a substrate,
- a plurality of semiconductor patterns on the substrate, spaced apart in a direction substantially perpendicular to an upper surface of the substrate,
- a bit line connected to one side surfaces of the plurality of semiconductor patterns in the first direction and extending in a direction substantially perpendicular to the upper surface of the substrate,
- a plurality of capacitors respectively connected to the other side surfaces of the plurality of semiconductor patterns along the first direction,
- a plurality of word lines respectively crossing the plurality of semiconductor patterns and extending in a second direction intersecting the first direction,
- a plurality of word line pads overlapping the plurality of capacitors in the second direction, and
- a plurality of word line contacts extending in a direction substantially perpendicular to the upper surface of the substrate;
- wherein at least some of the plurality of word line pads are respectively connected to the plurality of word line contacts,
- wherein the plurality of word line contacts are spaced apart in the first direction, and
- wherein the plurality of word line contacts are connected to upper surfaces of word line pads located in different layers.
7 more elements
A semiconductor device comprising:
- a substrate,
- a plurality of semiconductor patterns on the substrate, spaced apart in a direction substantially parallel to an upper surface of the substrate and in a direction substantially perpendicular to the upper surface of the substrate,
- a plurality of bit lines spaced apart in the direction substantially parallel to the upper surface of the substrate, each of the plurality of bit lines being connected to one side surfaces of the plurality of semiconductor patterns spaced apart in the direction substantially perpendicular to the upper surface of the substrate along a first direction, and extending in the direction substantially perpendicular to the upper surface of the substrate,
- a plurality of capacitors respectively connected to other side surfaces of the plurality of semiconductor patterns along the first direction,
- a plurality of word lines spaced apart in the direction substantially perpendicular to the upper surface of the substrate and in the first direction, each of the plurality of word lines crossing the plurality of semiconductor patterns spaced apart in a second direction intersecting the first direction, and extending in the second direction,
- a plurality of word line pads overlapping the plurality of capacitors in the second direction, each of the plurality of word line pads connecting two word lines among the plurality of word lines that are adjacent in the first direction with the capacitor interposed therebetween, and
- a plurality of word line contacts extending in the direction substantially perpendicular to the upper surface of the substrate and spaced apart in the first direction on each of the plurality of word line pads,
- wherein the plurality of word line contacts are connected to upper surfaces of word line pads located in different layers.
5 more elements
Dependencies are inferred from the claim text.