H10W 20/45
Characterised by their insulating parts
Official title: characterised by their insulating parts
H10W20/45 (Characterised by their insulating parts) appears on 8,448 US grants and 9,277 published applications in this corpus.
Search patents in H10W- Granted patents
- 8,448
- Published applications
- 9,277
- Assignees
- 829
- Inventors
- 11,158
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 3 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 3 | 0 |
| 1982 | 7 | 0 |
| 1983 | 5 | 0 |
| 1984 | 5 | 0 |
| 1985 | 7 | 0 |
| 1986 | 8 | 0 |
| 1987 | 11 | 0 |
| 1988 | 9 | 0 |
| 1989 | 9 | 0 |
| 1990 | 12 | 0 |
| 1991 | 21 | 0 |
| 1992 | 37 | 0 |
| 1993 | 24 | 0 |
| 1994 | 41 | 0 |
| 1995 | 42 | 0 |
| 1996 | 49 | 0 |
| 1997 | 58 | 0 |
| 1998 | 94 | 0 |
| 1999 | 107 | 0 |
| 2000 | 141 | 0 |
| 2001 | 177 | 79 |
| 2002 | 204 | 231 |
| 2003 | 199 | 205 |
| 2004 | 165 | 249 |
| 2005 | 182 | 310 |
| 2006 | 198 | 293 |
| 2007 | 199 | 272 |
| 2008 | 175 | 360 |
| 2009 | 175 | 263 |
| 2010 | 230 | 237 |
| 2011 | 258 | 201 |
| 2012 | 184 | 205 |
| 2013 | 210 | 235 |
| 2014 | 281 | 366 |
| 2015 | 328 | 452 |
| 2016 | 443 | 434 |
| 2017 | 504 | 461 |
| 2018 | 416 | 458 |
| 2019 | 454 | 489 |
| 2020 | 501 | 554 |
| 2021 | 424 | 529 |
| 2022 | 416 | 547 |
| 2023 | 399 | 524 |
| 2024 | 395 | 515 |
| 2025 | 412 | 536 |
| 2026 | 219 | 272 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Barrier layers for interconnects in bonded wafers6 Oct 2026US 12,757,721 B2United Microelectronics Corp.
- Method for preparing semiconductor device with air spacer6 Oct 2026US 12,757,724 B2Nanya Technology Corporation
- Semiconductor device with composite dielectric and method for fabricating the same6 Oct 2026US 12,757,725 B2Nanya Technology Corporation
- Semiconductor structure, semiconductor device with air spacers, and method for fabricating the same6 Oct 2026US 12,757,738 B2Nanya Technology Corporation
- Semiconductor structure and manufacturing method thereof29 Sep 2026US 12,751,258 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device8 Oct 2026US 2026/0314381 A1Fujian Jinhua Integrated Circuit Co., Ltd.
- Interconnection structure and method for fabricating the same8 Oct 2026US 2026/0314386 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device manufacturing method and semiconductor device manufacturing system8 Oct 2026US 2026/0314387 A1Tokyo Electron Limited
- Method of forming a cap layer for sealing an air gap, and semiconductor device8 Oct 2026US 2026/0314388 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method8 Oct 2026US 2026/0314458 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Production of elemental thin films using a boron-containing reducing agent809US 6,475,276 B1ASM Microchemistry Oy · 2002
- Porous dielectric material with improved pore surface properties for electronics applications635US 5,504,042 ATexas Instruments Incorporated · 1996
- Porous dielectric material with improved pore surface properties for electronics applications623US 6,140,252 ATexas Instruments Incorporated · 2000
- Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications600US 7,084,079 B2International Business Machines Corporation · 2006
- Method to reduce bit line capacitance in cub drams579US 6,472,266 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2002