H10W 20/47
Comprising two or more dielectric layers having different properties
Official title: comprising two or more dielectric layers having different properties, e.g. different dielectric constants
H10W20/47 (Comprising two or more dielectric layers having different properties) appears on 3,940 US grants and 4,829 published applications in this corpus.
Search patents in H10W- Granted patents
- 3,940
- Published applications
- 4,829
- Assignees
- 428
- Inventors
- 5,746
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 3 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 2 | 0 |
| 1991 | 2 | 0 |
| 1992 | 5 | 0 |
| 1993 | 2 | 0 |
| 1994 | 7 | 0 |
| 1995 | 12 | 0 |
| 1996 | 3 | 0 |
| 1997 | 4 | 0 |
| 1998 | 10 | 0 |
| 1999 | 8 | 0 |
| 2000 | 14 | 0 |
| 2001 | 28 | 16 |
| 2002 | 57 | 70 |
| 2003 | 60 | 80 |
| 2004 | 66 | 113 |
| 2005 | 66 | 143 |
| 2006 | 91 | 160 |
| 2007 | 108 | 193 |
| 2008 | 117 | 229 |
| 2009 | 97 | 150 |
| 2010 | 122 | 136 |
| 2011 | 152 | 114 |
| 2012 | 104 | 118 |
| 2013 | 117 | 108 |
| 2014 | 166 | 220 |
| 2015 | 167 | 251 |
| 2016 | 258 | 254 |
| 2017 | 273 | 240 |
| 2018 | 233 | 229 |
| 2019 | 215 | 205 |
| 2020 | 223 | 245 |
| 2021 | 182 | 253 |
| 2022 | 206 | 289 |
| 2023 | 191 | 292 |
| 2024 | 208 | 298 |
| 2025 | 229 | 286 |
| 2026 | 127 | 137 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor structure and manufacturing method thereof29 Sep 2026US 12,751,258 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Selective deposition using graphene as an inhibitor29 Sep 2026US 12,751,261 B2Lam Research Corporation
- Semiconductor device structure with dielectric liner portions and method for preparing the same29 Sep 2026US 12,751,282 B2Nanya Technology Corporation
- Interconnection structure and method for fabricating the same8 Oct 2026US 2026/0314386 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Self-forming barrier for use in air gap formation1 Oct 2026US 2026/0305282 A1Adeia Semiconductor Solutions LLC
- Semiconductor device including metal wiring layer1 Oct 2026US 2026/0305314 A1Samsung Electronics Co., Ltd.
- Semiconductor device having high-voltage isolation capacitor1 Oct 2026US 2026/0305322 A1SK keyfoundry Inc.
- Semiconductor structure including a bit line structure and method of manufacturing the same24 Sep 2026US 2026/0293116 A1Nanya Technology Corporation
Most cited
By later US patents
- Production of elemental thin films using a boron-containing reducing agent809US 6,475,276 B1ASM Microchemistry Oy · 2002
- Structures and methods for integration of ultralow-k dielectrics with improved reliability554US 7,088,003 B2International Business Machines Corporation · 2006
- Method for fabricating semiconductor device537US 7,842,518 B2Kabushiki Kaisha Toshiba · 2010
- Method for forming interconnect structure having airgap527US 8,241,991 B2ASM Japan K .K. · 2012
- Methods of forming wiring structures492US 9,281,277 B2Samsung Electronics Co., Ltd. · 2016