Semiconductor device including metal wiring layer

A semiconductor device comprising:

• a substrate;
• a metal wiring layer disposed above the substrate;
• a lower insulating structure disposed on the substrate and in contact with the metal wiring layer;
• an upper insulating structure disposed on the lower insulating structure;
• and
• a metal via disposed on the metal wiring layer and connected to the metal wiring layer,
• wherein the upper insulating structure comprises a first upper insulating layer disposed on the lower insulating structure and a second upper insulating layer disposed on the first upper insulating layer,
• the first upper insulating layer has a quadrangular shape of which side surfaces extend outward from both side surfaces of the lower insulating structure, and the second upper insulating layer has a tapered shape of which a side surface has a negative slope from a lower surface of the upper insulating structure.

A semiconductor device comprising:

• a substrate;
• a first etch stop layer disposed on the substrate;
• a metal wiring layer disposed on the first etch stop layer;
• a lower insulating structure passing through the first etch stop layer and disposed on the substrate while being in contact with a side surface of the metal wiring layer;
• an upper insulating structure disposed on the lower insulating structure;
• a second etch stop layer covering a surface of the upper insulating structure and an upper surface of the metal wiring layer;
• and
• a metal via passing through the second etch stop layer and disposed on the metal wiring layer, the metal via comprising a conductive liner and a conductive layer filling an inner space of the conductive liner,
• wherein the upper insulating structure comprises a first upper insulating layer disposed on the lower insulating structure and a second upper insulating layer disposed on the first upper insulating layer,
• the first upper insulating layer has a quadrangular shape of which side surfaces extend outward from both side surfaces of the lower insulating structure, and the second upper insulating layer has a tapered shape of which a side surface has a negative slope from a lower surface of the upper insulating structure.