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US 12,751,282 B2Granted
Semiconductor device structure with dielectric liner portions and method for preparing the same
AssigneeNanya Technology Corporation
InventorTse-Yao Huang
Life of this patent
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Abstract
A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a second dielectric layer disposed over the first dielectric layer. The semiconductor device structure also includes a first interconnect structure and a second interconnect structure disposed over the second dielectric layer. The semiconductor device structure further includes a first dielectric liner portion disposed adjacent to the first interconnect structure. An air gap is enclosed in the first dielectric liner portion. In addition, the semiconductor device structure includes a second dielectric liner portion disposed adjacent to the second interconnect structure, and a filling portion surrounded by the second dielectric liner portion.
Claims8
A semiconductor device structure, comprising:
- a first dielectric layer disposed over a semiconductor substrate;
- a second dielectric layer disposed over the first dielectric layer;
- a first interconnect structure and a second interconnect structure disposed over the second dielectric layer, wherein a bottom surface of the first interconnect structure and a bottom surface of the second interconnect structure are in contact with a top surface of the second dielectric layer;
- a first dielectric liner portion disposed adjacent to the first interconnect structure;
- a second dielectric liner portion disposed adjacent to the second interconnect structure;
- a first filling portion surrounded by the first dielectric liner portion;
- a second filling portion surrounded by the second dielectric liner portion, wherein a material of the first filling portion is the same as a material of the second filling portion, and a width of the second filling portion is greater than a width of the first filling portion;
- and
- a third interconnect structure and a fourth interconnect structure disposed over the second dielectric layer to form a first opening between the first interconnect structure and the third interconnect structure and a second opening between the fourth interconnect structure and the second interconnect structure, wherein the first dielectric liner portion is disposed between the first interconnect structure and the third interconnect structure and within the first opening, and the second dielectric liner portion is disposed between the second interconnect structure and the fourth interconnect structure and within the second opening;
- wherein a material of the first dielectric liner portion is the same as a material of the second dielectric liner portion;
- wherein a width of the second opening is greater than a width of the first opening;
- wherein the width of the first opening is greater than the width of the first filling portion while the width of the second opening is greater than the width of the first filling portion;
- wherein the bottom surface of the first interconnect structure, the bottom surface of the second interconnect structure, a bottom surface of the first dielectric liner portion, and a bottom surface of the second dielectric liner portion are coplanar with each other;
- wherein a top surface of the first interconnect structure, a top surface of the second interconnect structure, a top surface of the first filling portion, a top surface of the second filling portion, a top surface of the first dielectric liner portion, and a top surface of the second dielectric liner portion are coplanar with each other;
- wherein each of the first interconnect structure, the second interconnect structure, the third interconnect structure, and a fourth interconnect structure comprises a first conductive layer formed on and in contact with the top surface of the second dielectric layer and a second conductive layer formed on and in contact with a top surface of the first conductive layer;
- wherein the first filling portion is disposed in the first dielectric liner portion at a position that the first filling portion is extended from a horizontal level of a top surface of the second conductive layer to a horizontal level below a top surface of the first conductive layer, such that a bottom surface of the first filling portion is positioned between the top surface of the first conductive layer and a bottom surface of the first conductive layer;
- wherein the second filling portion is disposed in the second dielectric liner portion at a position that the second filling portion is extended from the horizontal level of the top surface of the second conductive layer to the horizontal level below the top surface of the first conductive layer, such that a bottom surface of the second filling portion is positioned between the top surface of the first conductive layer and the bottom surface of the first conductive layer;
- wherein the material of the first dielectric liner portion and the material of the second dielectric liner portion include boron carbonitride (BCN), wherein the first conductive layer is a barrier layer.
15 more elements
Dependencies are inferred from the claim text.