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US 2026/0293116 A1Published application
Semiconductor structure including a bit line structure and method of manufacturing the same
AssigneeNanya Technology Corporation
InventorHSU CHIANG
Life of this patent
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Abstract
A semiconductor structure and a method of manufacturing the same are provided. The semiconductor structure includes a base structure, a bit line structure and a spacer. The bit line structure is disposed over the base structure. The spacer is disposed around the bit line structure, and includes a first layer, a second layer and a third layer. The third layer is disposed over the second layer. A width of the third layer is substantially equal to a width of the second layer.
Claims14
A semiconductor structure, comprising:
- a base structure;
- a first bit line structure disposed over the base structure;
- a second bit line structure disposed over the base structure;
- a first spacer disposed around the first bit line structure, and including a first layer, a second layer and a third layer, wherein the third layer of the first spacer is disposed over the second layer of the first spacer, and a width of the third layer of the first spacer is substantially equal to a width of the second layer of the first spacer;
- and
- a second spacer disposed around the second bit line structure, and including a first layer, a second layer and a third layer, wherein the third layer of the second spacer is disposed over the second layer of the second spacer, and a width of the third layer of the second spacer is substantially equal to a width of the second layer of the second spacer.
3 more elements
A method of manufacturing a semiconductor structure, comprising:
- providing a base structure, wherein the base structure includes a base portion and at least one active area in the base portion;
- forming at least one bit line structure over the at least one active area of the base structure;
- and
- forming at least one spacer around the at least one bit line structure, wherein the least one spacer includes a first layer, a second layer and a third layer, wherein the third layer is disposed over the second layer and a width of the third layer is substantially equal to a width of the second layer.
1 more element
Dependencies are inferred from the claim text.