Semiconductor device having high-voltage isolation capacitor

A semiconductor device comprising:

• a substrate;
• and
• a high-voltage isolation capacitor region comprising:
• a first bottom electrode and a second bottom electrode disposed over the substrate, wherein the first bottom electrode is laterally spaced apart from the second bottom electrode;
• an inter-metal dielectric layer disposed over the first and second bottom electrodes;
• a first lower sub-low bandgap dielectric layer and a second lower sub-low bandgap dielectric layer disposed on the inter-metal dielectric layer, the first lower sub-low bandgap dielectric layer being laterally spaced apart from the second lower sub-low bandgap dielectric layer, wherein the first and second lower sub-low bandgap dielectric layers vertically overlap the first and second bottom electrodes, respectively;
• a first groove defined in a top surface of the inter-metal dielectric layer and positioned laterally between the first lower sub-low bandgap dielectric layer and the second lower sub-low bandgap dielectric layer;
• a first upper sub-low bandgap dielectric layer and a second upper sub-low bandgap dielectric layer disposed on the first lower sub-low bandgap dielectric layer and the second lower sub-low bandgap dielectric layer, respectively;
• and
• a first top electrode and a second top electrode disposed on the first upper sub-low bandgap dielectric layer and the second upper sub-low bandgap dielectric layer, respectively, such that the first and second top electrodes vertically overlap the first and second bottom electrodes, respectively.

A semiconductor device comprising:

• a substrate;
• and
• a high-voltage isolation capacitor region comprising:
• a first bottom electrode and a second bottom electrode disposed over the substrate, wherein the first bottom electrode is laterally spaced apart from the second bottom electrode;
• an inter-metal dielectric layer disposed over the first and second bottom electrodes;
• a continuous low bandgap dielectric layer disposed on the inter-metal dielectric layer and extending continuously over both the first bottom electrode and the second bottom electrode without an intervening structural break;
• and
• a first top electrode and a second top electrode disposed on the continuous low bandgap dielectric layer, wherein the first and second top electrodes vertically overlap the first and second bottom electrodes, respectively.