H10W 20/48
Insulating materials thereof
H10W20/48 (Insulating materials thereof) appears on 4,131 US grants and 4,142 published applications in this corpus.
Search patents in H10W- Granted patents
- 4,131
- Published applications
- 4,142
- Assignees
- 570
- Inventors
- 6,440
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 3 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 7 | 0 |
| 1983 | 4 | 0 |
| 1984 | 5 | 0 |
| 1985 | 6 | 0 |
| 1986 | 7 | 0 |
| 1987 | 11 | 0 |
| 1988 | 9 | 0 |
| 1989 | 8 | 0 |
| 1990 | 10 | 0 |
| 1991 | 19 | 0 |
| 1992 | 33 | 0 |
| 1993 | 21 | 0 |
| 1994 | 36 | 0 |
| 1995 | 33 | 0 |
| 1996 | 42 | 0 |
| 1997 | 47 | 0 |
| 1998 | 76 | 0 |
| 1999 | 87 | 0 |
| 2000 | 97 | 0 |
| 2001 | 108 | 52 |
| 2002 | 131 | 155 |
| 2003 | 121 | 122 |
| 2004 | 98 | 109 |
| 2005 | 98 | 151 |
| 2006 | 89 | 131 |
| 2007 | 91 | 143 |
| 2008 | 93 | 172 |
| 2009 | 72 | 106 |
| 2010 | 96 | 91 |
| 2011 | 114 | 74 |
| 2012 | 59 | 76 |
| 2013 | 98 | 111 |
| 2014 | 118 | 180 |
| 2015 | 161 | 238 |
| 2016 | 228 | 201 |
| 2017 | 250 | 252 |
| 2018 | 211 | 222 |
| 2019 | 217 | 261 |
| 2020 | 250 | 251 |
| 2021 | 185 | 202 |
| 2022 | 167 | 178 |
| 2023 | 153 | 180 |
| 2024 | 133 | 181 |
| 2025 | 144 | 189 |
| 2026 | 76 | 114 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Metallization stack and method of manufacturing the same, and electronic device including metallization stack29 Sep 2026US 12,751,275 B2Institute of Microelectronics, Chinese Academy of Sciences
- Semiconductor package with a carbonized modified layer covered by a passivation layer29 Sep 2026US 12,751,280 B2Samsung Electronics Co., Ltd.
- Semiconductor transistor structure and fabrication method thereof22 Sep 2026US 12,745,443 B2United Microelectronics Corp.
- Self-aligned litho-etch-litho-etch mandrel cut process for advanced FINFET interconnect22 Sep 2026US 12,745,580 B2International Business Machines Corporation
- Interconnection structure and method for fabricating the same8 Oct 2026US 2026/0314386 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method8 Oct 2026US 2026/0314458 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Increased thermal conductivity of semi-damascene metal wiring1 Oct 2026US 2026/0305291 A1International Business Machines Corporation
- Apparatus including cell contact and redistribution layer structure1 Oct 2026US 2026/0305313 A1Micron Technology, Inc.
- Electronic device1 Oct 2026US 2026/0305315 A1Advanced Semiconductor Engineering, Inc.
Most cited
By later US patents
- Production of elemental thin films using a boron-containing reducing agent809US 6,475,276 B1ASM Microchemistry Oy · 2002
- Porous dielectric material with improved pore surface properties for electronics applications635US 5,504,042 ATexas Instruments Incorporated · 1996
- Porous dielectric material with improved pore surface properties for electronics applications623US 6,140,252 ATexas Instruments Incorporated · 2000
- Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications600US 7,084,079 B2International Business Machines Corporation · 2006
- Semiconductor device having a passivation layer with silicon nitride layers563US 5,306,946 ASeiko Epson Corporation · 1994