H10W 20/46
Comprising air gaps
Official title: comprising air gaps
H10W20/46 (Comprising air gaps) appears on 3,085 US grants and 3,350 published applications in this corpus.
Search patents in H10W- Granted patents
- 3,085
- Published applications
- 3,350
- Assignees
- 369
- Inventors
- 4,061
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 5 | 0 |
| 1993 | 4 | 0 |
| 1994 | 4 | 0 |
| 1995 | 11 | 0 |
| 1996 | 14 | 0 |
| 1997 | 15 | 0 |
| 1998 | 28 | 0 |
| 1999 | 30 | 0 |
| 2000 | 51 | 0 |
| 2001 | 83 | 29 |
| 2002 | 68 | 71 |
| 2003 | 60 | 63 |
| 2004 | 48 | 91 |
| 2005 | 72 | 122 |
| 2006 | 88 | 102 |
| 2007 | 72 | 73 |
| 2008 | 49 | 127 |
| 2009 | 76 | 105 |
| 2010 | 92 | 84 |
| 2011 | 89 | 90 |
| 2012 | 76 | 85 |
| 2013 | 83 | 100 |
| 2014 | 109 | 114 |
| 2015 | 119 | 147 |
| 2016 | 160 | 159 |
| 2017 | 176 | 146 |
| 2018 | 131 | 156 |
| 2019 | 161 | 128 |
| 2020 | 158 | 190 |
| 2021 | 160 | 222 |
| 2022 | 177 | 264 |
| 2023 | 183 | 211 |
| 2024 | 172 | 191 |
| 2025 | 166 | 185 |
| 2026 | 87 | 95 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Metallization stack and method of manufacturing the same, and electronic device including metallization stack29 Sep 2026US 12,751,275 B2Institute of Microelectronics, Chinese Academy of Sciences
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- Semiconductor structure including lines of different height22 Sep 2026US 12,745,616 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device manufacturing method and semiconductor device manufacturing system8 Oct 2026US 2026/0314387 A1Tokyo Electron Limited
- Method of forming a cap layer for sealing an air gap, and semiconductor device8 Oct 2026US 2026/0314388 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method8 Oct 2026US 2026/0314458 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Self-forming barrier for use in air gap formation1 Oct 2026US 2026/0305282 A1Adeia Semiconductor Solutions LLC
- Increased thermal conductivity of semi-damascene metal wiring1 Oct 2026US 2026/0305291 A1International Business Machines Corporation
Most cited
By later US patents
- Porous dielectric material with improved pore surface properties for electronics applications635US 5,504,042 ATexas Instruments Incorporated · 1996
- Porous dielectric material with improved pore surface properties for electronics applications623US 6,140,252 ATexas Instruments Incorporated · 2000
- Method to reduce bit line capacitance in cub drams579US 6,472,266 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2002
- Structures and methods for integration of ultralow-k dielectrics with improved reliability554US 7,088,003 B2International Business Machines Corporation · 2006
- Method for forming interconnect structure having airgap527US 8,241,991 B2ASM Japan K .K. · 2012