H10W 20/059
By reflowing or applying pressure
Official title: {by reflowing or applying pressure}
H10W20/059 (By reflowing or applying pressure) appears on 570 US grants and 472 published applications in this corpus.
Search patents in H10W- Granted patents
- 570
- Published applications
- 472
- Assignees
- 117
- Inventors
- 880
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 2 | 0 |
| 1993 | 4 | 0 |
| 1994 | 4 | 0 |
| 1995 | 4 | 0 |
| 1996 | 8 | 0 |
| 1997 | 6 | 0 |
| 1998 | 12 | 0 |
| 1999 | 22 | 0 |
| 2000 | 27 | 0 |
| 2001 | 42 | 17 |
| 2002 | 26 | 30 |
| 2003 | 25 | 29 |
| 2004 | 25 | 9 |
| 2005 | 18 | 11 |
| 2006 | 7 | 7 |
| 2007 | 8 | 9 |
| 2008 | 8 | 8 |
| 2009 | 7 | 5 |
| 2010 | 5 | 4 |
| 2011 | 4 | 6 |
| 2012 | 2 | 14 |
| 2013 | 15 | 23 |
| 2014 | 16 | 26 |
| 2015 | 17 | 30 |
| 2016 | 23 | 18 |
| 2017 | 41 | 41 |
| 2018 | 41 | 39 |
| 2019 | 32 | 32 |
| 2020 | 30 | 21 |
| 2021 | 20 | 26 |
| 2022 | 17 | 17 |
| 2023 | 11 | 18 |
| 2024 | 16 | 20 |
| 2025 | 11 | 7 |
| 2026 | 8 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Thermally conductive semiconductor packaging structure and method for preparing same25 Aug 2026US 12,721,161 B2SJ Semiconductor(Jiangyin) Corporation
- Integrated circuit device26 May 2026US 12,642,076 B2Samsung Electronics Co., Ltd.
- Method and system for forming material within a gap using meltable material19 May 2026US 12,635,483 B2ASM IP Holding B. V.
- Selective self-assembled monolayer (SAM) removal5 May 2026US 12,622,242 B2APPLIED Materials.Inc.
- FinFET structure with controlled air gaps24 Mar 2026US 12,588,498 B2Taiwan Semiconductor Manufacturing Company.Ltd
- thermally conductive semiconductor packaging structure and method for preparing same1 Oct 2026US 2026/0305331 A1SJ Semiconductor(Jiangyin) Corporation
- Doped conductive features of an interconnect structure and methods of manufacturing the same18 Jun 2026US 2026/0173837 A1
- Semiconductor device and method for forming the same18 Jun 2026US 2026/0173853 A1Winbond Electronics Corp.
- Self-filling method for high-aspect-ratio microvias in substrate5 Feb 2026US 2026/0035800 A1Guangdong University of Technology
- Vias for cobalt-based interconnects and methods of fabrication thereof15 Jan 2026US 2026/0018460 A1Parabellum Strategic Opportunities Fund LLC
Most cited
By later US patents
- Wiring structure of semiconductor device and method for manufacturing the same486US 5,998,870 ASamsung Electronics Co., Ltd. · 1999
- Low temperature high pressure high H2/WF6 ratio W process for 3D NAND application421US 8,900,999 B1APPLIED Materials.Inc. · 2014
- Method for filling high aspect ratio openings of an integrated circuit to minimize electromigration failure322US 6,077,780 AAdvanced Micro Devices, Inc. · 2000
- Metal air gap191US 9,159,606 B1APPLIED Materials.Inc. · 2015
- Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer121US 6,217,721 B1APPLIED Materials.Inc. · 2001