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US 2026/0173853 A1Published application
Semiconductor device and method for forming the same
AssigneeWinbond Electronics Corp.
InventorsPing-Lung YU, Po-Chun SHAO
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Abstract
A semiconductor device and a method for forming the same are provided. The formation method includes providing a base layer. A trench is formed in the base layer. An implantation process is performed on the base layer to form a first barrier layer on a side surface of the trench. A second barrier layer is formed on the first barrier layer and on a bottom surface of the trench. A seed layer is formed on the second barrier layer. A conductive pillar is formed on the seed layer.
Claims20
A method for forming a semiconductor device, comprising:
- providing a base layer;
- forming a trench in the base layer;
- performing an implantation process on the base layer to form a first barrier layer on a side surface of the trench;
- forming a second barrier layer on the first barrier layer and on a bottom surface of the trench;
- forming a seed layer on the second barrier layer;
- and
- forming a conductive pillar on the seed layer.
4 more elements
A semiconductor device comprising:
- a base layer;
- a conductive structure disposed in the base layer;
- a first barrier layer disposed in the base layer and on a portion of a top surface of the conductive structure;
- a second barrier layer disposed in the base layer, disposed on the first barrier layer, and disposed on a remaining portion of the top surface of the conductive structure;
- a seed layer disposed on the second barrier layer;
- and
- a conductive pillar disposed on the seed layer.
4 more elements
Dependencies are inferred from the claim text.