Selective self-assembled monolayer (SAM) removal

A method of forming a microelectronic device, the method comprising:

• forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom;
• forming a hardmask on the dielectric layer;
• selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap and on the hardmask;
• treating the microelectronic device with a hydrogen (H2) plasma in a depletion mode to remove the self-assembled monolayer (SAM) from the hardmask;
• forming a barrier layer on the dielectric layer and on the hardmask, wherein treating the microelectronic device with the hydrogen (Ha) plasma comprises increasing a density of the barrier layer;
• removing the SAM from the bottom of the gap;
• selectively depositing a metal liner on the barrier layer on the sidewall;
• and
• performing a gap fill process on the metal liner.