H10W 20/056
By filling conductive material into holes, grooves or trenches
Official title: {by filling conductive material into holes, grooves or trenches}
H10W20/056 (By filling conductive material into holes, grooves or trenches) appears on 12,152 US grants and 12,798 published applications in this corpus.
Search patents in H10W- Granted patents
- 12,152
- Published applications
- 12,798
- Assignees
- 1,065
- Inventors
- 14,583
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 6 | 0 |
| 1978 | 9 | 0 |
| 1979 | 1 | 0 |
| 1980 | 4 | 0 |
| 1981 | 6 | 0 |
| 1982 | 12 | 0 |
| 1983 | 11 | 0 |
| 1984 | 8 | 0 |
| 1985 | 13 | 0 |
| 1986 | 21 | 0 |
| 1987 | 20 | 0 |
| 1988 | 17 | 0 |
| 1989 | 33 | 0 |
| 1990 | 46 | 0 |
| 1991 | 49 | 0 |
| 1992 | 59 | 0 |
| 1993 | 78 | 0 |
| 1994 | 65 | 0 |
| 1995 | 61 | 0 |
| 1996 | 70 | 0 |
| 1997 | 89 | 0 |
| 1998 | 109 | 0 |
| 1999 | 153 | 0 |
| 2000 | 246 | 0 |
| 2001 | 286 | 100 |
| 2002 | 282 | 275 |
| 2003 | 219 | 262 |
| 2004 | 247 | 273 |
| 2005 | 192 | 275 |
| 2006 | 162 | 274 |
| 2007 | 171 | 235 |
| 2008 | 147 | 222 |
| 2009 | 129 | 251 |
| 2010 | 193 | 206 |
| 2011 | 185 | 203 |
| 2012 | 158 | 253 |
| 2013 | 221 | 314 |
| 2014 | 350 | 510 |
| 2015 | 487 | 755 |
| 2016 | 743 | 691 |
| 2017 | 864 | 844 |
| 2018 | 742 | 789 |
| 2019 | 816 | 868 |
| 2020 | 829 | 920 |
| 2021 | 782 | 885 |
| 2022 | 588 | 838 |
| 2023 | 577 | 758 |
| 2024 | 630 | 758 |
| 2025 | 597 | 654 |
| 2026 | 368 | 385 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device with embedded sigma-shaped structure6 Oct 2026US 12,757,431 B2Nanya Technology Corporation
- Backside power distribution network and signal line integration6 Oct 2026US 12,757,444 B2International Business Machines Corporation
- Method for gapfill6 Oct 2026US 12,757,698 B2APPLIED Materials.Inc.
- Semiconductor memory device manufacturing method6 Oct 2026US 12,757,699 B2Nanya Technology Corporation
- Area selective deposition for zero via enclosure and extremely small metal line end space6 Oct 2026US 12,757,700 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with backside interconnection and method for forming the same8 Oct 2026US 2026/0313967 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure including cap layer of two-dimensional material and method for manufacturing the same8 Oct 2026US 2026/0314350 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including a self-formed barrier metal layer8 Oct 2026US 2026/0314351 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Low resistance interconnect features and method for manufacturing the same8 Oct 2026US 2026/0314352 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0314356 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers1,159US 5,278,100 AMicron Technology, Inc. · 1994
- Package systems having interposers1,064US 9,048,233 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Dummy structure for chip-on-wafer-on-substrate961US 9,425,126 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Production of elemental thin films using a boron-containing reducing agent809US 6,475,276 B1ASM Microchemistry Oy · 2002