Low resistance interconnect features and method for manufacturing the same

A semiconductor structure, comprising:

• a first dielectric feature;
• a first interconnect feature disposed in the first dielectric feature and including a first conductive element;
• a first cap feature including a first cap element disposed on the first conductive element, the first cap element including a two-dimensional material;
• a second dielectric feature disposed over the first dielectric feature, the first cap feature and the first interconnect feature;
• and
• a second interconnect feature including a conductive portion that extends through the second dielectric feature and the first cap element.

A semiconductor structure, comprising:

• a first dielectric feature;
• a first interconnect feature disposed in the first dielectric feature and including a first conductive element;
• a first cap feature including a first cap element disposed on the first conductive element, the first cap element including a two-dimensional material;
• a second dielectric feature disposed over the first dielectric feature, the first cap feature and the first interconnect feature;
• and
• a second interconnect feature including
• a second conductive element that is disposed in the second dielectric feature and that extends through the first cap element, and
• a lower barrier layer interposed between the second conductive element and the second dielectric feature, a level of a bottom surface of the second conductive element is lower than a level of a bottom surface of the barrier layer.