H10W 20/057
By selectively depositing
Official title: {by selectively depositing, e.g. by using selective CVD or plating}
H10W20/057 (By selectively depositing) appears on 2,599 US grants and 2,762 published applications in this corpus.
Search patents in H10W- Granted patents
- 2,599
- Published applications
- 2,762
- Assignees
- 439
- Inventors
- 4,279
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 3 | 0 |
| 1986 | 11 | 0 |
| 1987 | 4 | 0 |
| 1988 | 8 | 0 |
| 1989 | 21 | 0 |
| 1990 | 23 | 0 |
| 1991 | 22 | 0 |
| 1992 | 26 | 0 |
| 1993 | 31 | 0 |
| 1994 | 22 | 0 |
| 1995 | 17 | 0 |
| 1996 | 12 | 0 |
| 1997 | 24 | 0 |
| 1998 | 13 | 0 |
| 1999 | 16 | 0 |
| 2000 | 50 | 0 |
| 2001 | 42 | 12 |
| 2002 | 42 | 49 |
| 2003 | 28 | 43 |
| 2004 | 32 | 45 |
| 2005 | 30 | 43 |
| 2006 | 29 | 65 |
| 2007 | 32 | 49 |
| 2008 | 33 | 61 |
| 2009 | 30 | 59 |
| 2010 | 32 | 38 |
| 2011 | 48 | 55 |
| 2012 | 40 | 58 |
| 2013 | 56 | 91 |
| 2014 | 99 | 140 |
| 2015 | 136 | 248 |
| 2016 | 217 | 216 |
| 2017 | 240 | 212 |
| 2018 | 160 | 167 |
| 2019 | 189 | 173 |
| 2020 | 177 | 163 |
| 2021 | 134 | 146 |
| 2022 | 101 | 151 |
| 2023 | 84 | 133 |
| 2024 | 106 | 145 |
| 2025 | 105 | 125 |
| 2026 | 66 | 75 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Backside power distribution network and signal line integration6 Oct 2026US 12,757,444 B2International Business Machines Corporation
- Area selective deposition for zero via enclosure and extremely small metal line end space6 Oct 2026US 12,757,700 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Catalyst-enhanced chemical vapor deposition6 Oct 2026US 12,757,701 B2Tokyo Electron Limited
- Asymmetric skip-level via structure6 Oct 2026US 12,757,702 B2International Business Machines Corporation
- Semiconductor device and methods of formation6 Oct 2026US 12,757,728 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure including cap layer of two-dimensional material and method for manufacturing the same8 Oct 2026US 2026/0314350 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated passive device and method for manufacturing the same, electronic apparatus8 Oct 2026US 2026/0314393 A1Beijing BOE Sensor Technology Co., Ltd.
- Directly electroplated through-hole via and method1 Oct 2026US 2026/0305279 A1Raytheon Company
- Semiconductor Device Structure Having a Multi-Layer Conductive Feature and Method Making the Same1 Oct 2026US 2026/0305330 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ruthenium seeding for corrosion free molybdenum growth17 Sep 2026US 2026/0282856 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Dummy structure for chip-on-wafer-on-substrate961US 9,425,126 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Selective electroless copper deposited interconnect plugs for ULSI applications638US 5,674,787 ASematech, Inc. · 1997
- Use of cobalt tungsten phosphide as a barrier material for copper metallization608US 5,695,810 ACornell Research Foundation, Inc. · 1997
- Chip interconnect and packaging deposition methods and structures556US 7,147,766 B2ASM Nutool, Inc. · 2006