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US 12,757,698 B2Granted
Method for gapfill
AssigneeApplied Materials, Inc.
InventorsYi Xu, Yu Lei, Aixi Zhang, Rongjun Wang
Life of this patent
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Abstract
A method of gap fill may include depositing a sacrificial Si layer in an opening of a feature and on a field of a substrate. In addition, the method may include depositing a metal layer in the opening and on the field, where at least a portion of the sacrificial Si layer is replaced with the metal layer. The method may also include depositing a metal gapfill material in the opening and on the field directly over the metal layer, where the metal gapfill material completely fills the opening.
Claims9
A method for metal gapfill, comprising:
- depositing a conformal sacrificial Si layer having a thickness of less than or equal to about 4 nm in an opening of a feature and on a field of a substrate;
- depositing a conformal metal layer in the opening and on the field, wherein at least 95 wt % of the sacrificial Si layer is replaced with the conformal metal layer;
- and depositing a metal gapfill material in the opening and on the field directly over the conformal metal layer, wherein the metal gapfill material completely fills the opening;
- wherein the depositing the conformal metal layer comprises atomic layer deposition, comprising contacting the sacrificial Si layer with a metal precursor according to formula I;
- MXa;
- (I) wherein M is cobalt,
- wherein X is fluorine or chlorine;
- and
- a is from 2 to 6;
- and
- wherein the conformal sacrificial Si layer is deposited over a base metal layer comprising the same metal as the conformal metal layer.
8 more elements
Dependencies are inferred from the claim text.