Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYen-Chih HUANG, Li-An SUN, Chih-Hao CHEN, Chung-Chuan HUANG
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Abstract
A semiconductor device includes a FEOL structure and a BEOL structure. The BEOL structure is formed over the FEOL structure and includes a conductive layer, an etching stop layer (ESL) structure, a through via and a barrier layer. The ESL structure is formed over the conductive layer and has a first recess and a lateral surface. The through via passes through the ESL structure to form the first recess and the lateral surface. The barrier layer covers the lateral surface and the first recess. The first recess is recessed with respect to the lateral surface, and the first recess has a first depth ranging between 1 nm and 7 nm.
Claims20
A semiconductor device, comprising:
- a FEOL (Front End of Line) structure;
- a BEOL (Back End of Line) structure formed over the FEOL structure, and comprising:
- a conductive layer;
- an etching stop layer (ESL) structure formed over the conductive layer and having a first recess and a lateral surface;
- a through via passing through the ESL structure to form the first recess and the lateral surface;
- and
- a barrier layer covering the lateral surface and the first recess;
- wherein the first recess is recessed with respect to the lateral surface.
A semiconductor device, comprising:
- a FEOL structure;
- a BEOL structure formed over the FEOL structure, comprising:
- a conductive layer;
- an ESL structure formed over the conductive layer and having a first recess and a lateral surface;
- a through via passing through the ESL structure to form the first recess and the lateral surface;
- and
- a barrier layer covering the lateral surface and the first recess;
- wherein the first recess is recessed with respect to the lateral surface, and the barrier layer covers the first recess.
A manufacturing method for a semiconductor device, comprising:
- forming a FEOL structure;
- and
- forming a BEOL structure over the FEOL structure, comprising:
- forming an ESL structure over a conductive layer;
- forming a first hole to pass through a portion of the ESL structure, wherein the ESL structure forms a lateral surface and a first recess recessed with respect to the lateral surface;
- forming a second hole to pass through another portion of the ESL structure, wherein the second hole exposes the conductive layer;
- and
- forming a barrier layer to cover the lateral surface and the first recess, wherein the barrier layer covers the first recess.
Dependencies are inferred from the claim text.