H10W 20/0595
By using multiple deposition steps separated by etching steps
Official title: {by using multiple deposition steps separated by etching steps}
H10W20/0595 (By using multiple deposition steps separated by etching steps) appears on 97 US grants and 152 published applications in this corpus.
Search patents in H10W- Granted patents
- 97
- Published applications
- 152
- Assignees
- 36
- Inventors
- 359
- Latest grant
- 5 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 2 | 0 |
| 2001 | 2 | 0 |
| 2002 | 0 | 1 |
| 2003 | 0 | 0 |
| 2004 | 0 | 4 |
| 2005 | 1 | 3 |
| 2006 | 3 | 2 |
| 2007 | 2 | 3 |
| 2008 | 0 | 3 |
| 2009 | 2 | 0 |
| 2010 | 2 | 3 |
| 2011 | 2 | 2 |
| 2012 | 2 | 2 |
| 2013 | 2 | 4 |
| 2014 | 3 | 0 |
| 2015 | 2 | 6 |
| 2016 | 1 | 3 |
| 2017 | 5 | 4 |
| 2018 | 4 | 4 |
| 2019 | 2 | 3 |
| 2020 | 2 | 8 |
| 2021 | 6 | 16 |
| 2022 | 10 | 28 |
| 2023 | 7 | 15 |
| 2024 | 12 | 18 |
| 2025 | 13 | 12 |
| 2026 | 7 | 8 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor devices5 May 2026US 12,622,035 B2Samsung Electronics Co., Ltd.
- Apparatus for single chamber deposition and etch31 Mar 2026US 12,590,363 B2APPLIED Materials.Inc.
- Method of fabricating void-free conductive feature of semiconductor device31 Mar 2026US 12,593,667 B2Nanya Technology Corporation
- Semiconductor device structure and methods of forming the same17 Feb 2026US 12,557,643 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with filling layer and method for fabricating the same27 Jan 2026US 12,538,788 B2Nanya Technology Corporation
- Selective ruthenium removal by microwave oxidation plasma17 Sep 2026US 2026/0282858 A1
- Methods of forming microelectronic devices including staircase structures, and related microelectronic devices30 Jul 2026US 2026/0223652 A1Micron Technology, Inc.
- Chemical soak preclean for selective metal fill and chemical adsorption9 Jul 2026US 2026/0198276 A1APPLIED Materials.Inc.
- Method for filling a via with a metal film9 Jul 2026US 2026/0198277 A1ASM IP Holding B. V.
- Methods of manufacturing an electronic circuit to reduce shorts and cracking between metal contacts4 Jun 2026US 2026/0157160 A1Micron Technology, Inc.
Most cited
By later US patents
- Depositing tungsten into high aspect ratio features445US 8,119,527 B1Novellus Systems, Inc. · 2012
- Depositing tungsten into high aspect ratio features319US 8,435,894 B2Novellus Systems, Inc. · 2013
- Damascene wiring with flat surface86US 6,028,362 AYamaha Corporation · 2000
- Tungsten feature fill61US 9,240,347 B2Novellus Systems, Inc. · 2016
- Depositing tungsten into high aspect ratio features60US 8,124,531 B2Novellus Systems, Inc. · 2012