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US 12,538,788 B2Granted
Semiconductor device with filling layer and method for fabricating the same
AssigneeNanya Technology Corporation
InventorTse-Yao Huang
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Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a conductive structure including a conductive concave layer positioned on the substrate and including a top surface having a V-shaped cross-sectional profile; and a conductive filling layer positioned on the conductive concave layer; and a top conductive layer positioned on the conductive structure. The conductive filling layer includes germanium or silicon germanium.
Claims15
A semiconductor device, comprising:
- a substrate;
- a conductive structure comprising:
- a conductive concave layer positioned on the substrate and comprising a top surface having a V-shaped cross-sectional profile;
- and
- a conductive filling layer positioned on the conductive concave layer;
- and
- a top conductive layer positioned on the conductive structure;
- wherein the conductive filling layer comprises germanium or silicon germanium;
- wherein the conductive concave layer comprises silicon and/or germanium with substantially no oxygen and nitrogen.
6 more elements
Dependencies are inferred from the claim text.