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US 2026/0198277 A1Published application
Method for filling a via with a metal film
AssigneeASM IP Holding B.V.
InventorPaul Ma
Life of this patent
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Abstract
A method for depositing a metal film into a feature on a substrate is disclosed. In particular, the method may comprise a low temperature plasma deposition step, a thermal etching step, and a selective filling step. This method allows for deposition of a metal film that has a lower contact resistance at an interface, resulting in a better electrical performance of a semiconductor device.
Claims16
A method of forming a semiconductor film on a substrate comprising:
- providing a substrate with a plurality of features for processing in a reaction chamber;
- depositing a metal film onto the substrate by a low temperature plasma deposition process;
- and
- thermally etching a portion of the metal film, such that a remaining portion of the metal film is located in a bottom of the plurality of features;
- and
- selectively depositing a metal fill layer within the plurality of features, wherein the metal fill layer comprises at least one of:
- niobium, molybdenum, ruthenium, or tungsten.
4 more elements
A semiconductor processing system for forming a semiconductor film on a substrate comprising:
- a reaction chamber;
- a substrate holder disposed within the reaction chamber and configured to hold a substrate to be processed;
- a gas distributor configured to distribute gas across the substrate disposed on the substrate holder;
- at least one gas source for providing a gas to the substrate on the substrate holder;
- and
- an RF source for generating a plasma from the gas;
- wherein the semiconductor processing system is configured to perform a method comprising:
- providing a substrate with a plurality of features for processing in a reaction chamber;
- depositing a metal film onto the substrate by a low temperature plasma deposition process;
- and
- thermally etching a portion of the metal film, such that a remaining portion of the metal film is located in a bottom of the plurality of features;
- and
- selectively depositing a metal fill layer within the plurality of features, wherein the metal fill layer comprises at least one of:
- niobium, molybdenum, ruthenium, or tungsten.
11 more elements
Dependencies are inferred from the claim text.