Chemical soak preclean for selective metal fill and chemical adsorption

A method of filling a semiconductor device structure, comprising:

• performing a first soak process on the semiconductor device structure comprising a feature formed within a dielectric layer of the semiconductor device structure, the first soak process comprising:
• flowing a first precursor gas over the feature, the first precursor gas comprising tungsten hexafluoride (WF6);
• forming a metal fill material in the feature, wherein:
• the metal fill material partially fills the feature, and
• a gap region is formed between a sidewall of the feature and the metal fill material;
• performing a second soak process on the semiconductor device structure, the second soak process comprising:
• flowing a second precursor gas over the feature and the metal fill material, the second precursor gas comprising WF6 or molybdenum (V) chloride (MoCl5);
• and
• forming a passivation layer over the feature, the passivation layer disposed over the metal fill material and within the gap region.

A semiconductor device structure, comprising:

• a first dielectric layer disposed over a substrate;
• a second dielectric layer disposed over the first dielectric layer;
• a feature formed through the first dielectric layer and the second dielectric layer;
• an electrical connection disposed within the feature;
• a metal fill material disposed over the electrical connection;
• and
• a passivation layer embedding the metal fill material.