US 12,622,035 B2 · Semiconductor devices

Abstract

A semiconductor device includes first and second gate structures, first and second contact plug structures and a first wiring on a substrate. The first and second source/drain layers are formed on portions of the substrate adjacent to the first and second gate structures, respectively. The first and second contact plug structures are formed on the first and second source/drain layers, respectively. The first wiring contacts an upper surface of the first gate structure. The first gate structure includes a first gate electrode and a first gate insulation pattern on a lower surface and a sidewall of the first gate electrode. The second gate structure includes a second gate electrode and a second gate insulation pattern on a lower surface and a sidewall of the second gate electrode. The upper surface of the second gate electrode is lower than an upper surface of the first gate electrode.

Claims20

Dependent claims

A semiconductor device, comprising:

first and second gate structures on a substrate;
first and second source/drain layers on portions of the substrate adjacent to the first and second gate structures, respectively;
first and second contact plug structures on the first and second source/drain layers, respectively;
and
a first wiring contacting an upper surface of the first gate structure,
wherein the first gate structure includes:
a first gate electrode;
and
a first gate insulation pattern on a lower surface and a sidewall of the first gate electrode,
wherein the second gate structure includes:
a second gate electrode;
and
a second gate insulation pattern on a lower surface and a sidewall of the second gate electrode, and
wherein the second gate electrode has a smaller vertical dimension than the first gate electrode.

11 more elements

Dependencies are inferred from the claim text.

Semiconductor devices

Life of this patent

Semiconductor devices

Life of this patent

Abstract

Claims20