FinFET structure with controlled air gaps
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-Che Tsai, Min-Yann Hsieh, Hua Feng Chen, Kuo-Hua Pan
Life of this patent
Estimating the term…
Abstract
The present disclosure provides an integrated circuit (IC) structure. The IC structure includes first and second fins formed on a semiconductor substrate and laterally separated from each other by an isolation feature, the isolation feature formed of a dielectric material that physically contacts the semiconductor substrate; and a contact feature between the first and second fins and extending into the isolation feature thereby defining an air gap vertically between the isolation feature and the contact feature, the dielectric material of the isolation feature extending from the semiconductor substrate to the contact feature.
Claims20
A device comprising:
- a dielectric isolation structure disposed on a semiconductor substrate;
- a first source/drain feature disposed on the semiconductor substrate;
- and
- a conductive feature extending from over a top surface of the first source/drain feature and to at least the dielectric isolation structure such that the conductive feature interfaces with the first source/drain feature and the dielectric isolation structure,
- wherein the conductive feature and the dielectric isolation structure define an air gap such that a portion of the conductive feature and a portion dielectric isolation are exposed to the air gap,
- wherein the conductive feature interfaces the top surface of the first source/drain feature.
A device comprising:
- a first gate stack and a second gate stack disposed on a substrate, the first gate stack extending to a first height above the substrate;
- a dielectric isolation structure disposed on the substrate between the first gate stack and the second gate stack;
- and
- a contact feature extending between the first and second gate stacks and into the dielectric isolation structure thereby defining an air gap between the dielectric isolation structure and the contact feature, wherein the contact feature includes a portion positioned within the dielectric isolation structure that is exposed to the air gap, the contact feature extending to a second height above the substrate that is greater than the first height.
A device comprising:
- a first source/drain feature disposed on a substrate;
- a second source/drain feature disposed on the substrate;
- a dielectric isolation feature extending within the substrate between the first source/drain feature and the second source/drain feature;
- and
- a first contact feature extending from a top surface of the first source/drain feature to a top surface of the second source/drain feature,
- wherein the first contact feature and the dielectric isolation feature define a first air gap therebetween such that the dielectric isolation feature and the first contact feature are exposed to the first air gap,
- wherein the first contact feature interfaces the top surface of the first source/drain feature and the top surface of the second source/drain feature.
Dependencies are inferred from the claim text.