Doped conductive features of an interconnect structure and methods of manufacturing the same

A method comprising:

• forming a trench within a dielectric layer;
• forming a first metal layer at least partially in the trench;
• forming a first doped layer over the first metal layer, the first doped layer including a first dopant;
• and
• performing a treatment process, wherein the first dopant of the first doped layer diffuses into the first metal layer during the treatment process such that a doped metal layer is formed as a result of performing the treatment process.

A method comprising:

• forming a first doped layer, the first doped layer including a first dopant;
• forming a first conductive layer over the first doped layer;
• forming a second doped layer over the first conductive layer, the second doped layer including a second dopant;
• forming a second conductive layer over the second doped layer;
• and
• after forming the second conductive layer, performing a treatment process, wherein the first and second dopants diffuse into the first conductive layer and the second conductive layer such that a doped conductive material is formed as a result of performing the treatment process.