Integrated circuit device

An integrated circuit device comprising:

• an insulating structure comprising an interlayer etch stop layer having a multi-layer structure disposed above a substrate and an interlayer insulating layer covering the interlayer etch stop layer;
• and
• an interconnection structure penetrating the interlayer etch stop layer and the interlayer insulating layer in a vertical direction and comprising first and second local protrusion portions,
• wherein the first and second local protrusion portions protrude outward in a horizontal direction from positions adjacent to the interlayer etch stop layer and are spaced apart from each other in the vertical direction,
• wherein the interconnection structure further comprises:
• a metal plug comprising a first metal;
• and
• a plurality of metal-containing particles comprising a second metal that is different from the first metal and being irregularly dispersed in a lower plug region among lower and upper plug regions of the metal plug, the lower plug region being spaced apart from an upper surface of the metal plug and comprising the first and second local protrusion portions, the upper plug region being a remaining region of the metal plug other than the lower plug region.

An integrated circuit device comprising:

• a lower structure above a substrate;
• an interlayer etch stop layer disposed on the lower structure and having a multi-layer structure comprising at least one aluminum (Al)-containing layer;
• an interlayer insulating layer covering an upper surface of the interlayer etch stop layer;
• and
• an interconnection structure comprising at least one local protrusion portion that penetrates the interlayer etch stop layer and the interlayer insulating layer in a vertical direction and protrudes outward in a horizontal direction at a position adjacent to the at least one aluminum (Al)-containing layer,
• wherein the interconnection structure further comprises:
• a metal plug comprising copper (Cu);
• and
• a plurality of dispersion particles comprising manganese (Mn) and irregularly dispersed in only a lower plug region of the metal plug, the lower plug region being spaced apart from an upper surface of the metal plug and comprising the at least one local protrusion portion.