Method and system for forming material within a gap using meltable material

A method of forming material within a gap on a surface of a substrate, the method comprising the steps of:

• providing the substrate within a reaction chamber of a reactor, the substrate comprising a gap and a surface material within the gap;
• forming a layer of meltable material comprising meltable material overlying the substrate;
• heating the meltable material to a flow temperature, wherein the flow temperature is higher than a melting temperature of the meltable material, to form molten material, wherein the molten material flows within the gap;
• and
• cooling the molten material to below the melting temperature to form fill material within the gap,
• wherein the meltable material is a dielectric material or a semiconductor, wherein the step of forming the layer of meltable material comprises:
• forming a convertible material layer on a surface of the substrate, wherein the convertible material layer comprises one or more of a metal oxide, silicon, germanium, or a compound semiconductor;
• and
• providing one or more of a halogen reactant and an oxyhalogen reactant to thereby form one or more of a halogenated material and an oxyhalogenated material on the surface.