Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer

A method of sputtering a metal in a hole having an aspect ratio of at least 2:1 formed in a dielectric in a substrate, comprising the steps of:

• a first step of sputter depositing onto said substrate a first layer comprising a compound of a refractory metal in a high-density plasma, a high-density plasma being defined as a plasma having an average ionization density of greater than 1011cm −3 throughout a region said plasma fills;
• and
• a second step of sputter depositing over said first layer a second, metallic layer, wherein said second depositing step comprises:
• a first substep of sputter depositing a first sublayer while said substrate is held at a first temperature;
• and
• a second substep of sputter depositing a second sublayer while said substrate is held at a second temperature of less than 400° C. and higher than said first temperature.

A method of sputtering a metal onto a substrate, comprising the steps of:

• a first step of sputter depositing onto said substrate a first layer comprising a compound of a refractory metal in a high-density plasma, a high-density plasma being defined as a plasma having an average ionization density of greater than 1011cm−3 throughout a region said plasma fills,
• wherein said first step is performed in a plasma reaction chamber including an inductive coil wrapped around said chamber and powered by a first RF electrical source and a DC electrical source is connected between a sputtering target comprising titanium and a pedestal supporting said substrate, and
• wherein during a generation of said high-density plasma said RF electrical source provides an RF power PRF to said coil and said DC electrical source provides a DC power PDC to said target, and PRF is equal to or greater than 20% of PDC;
• and
• a second step of sputter depositing over said first layer a second, metallic layer.

A method of sputtering a metal layer, comprising the steps of:

• placing a substrate into a first sputtering chamber including an inductive coil for forming a plasma therein;
• a first step including a first substep of depositing onto said substrate within said first sputtering chamber a first layer comprising a compound of at least one refractory metal, said first depositing step utilizing said plasma formed by said inductive coil;
• transferring said substrate from said first sputtering chamber to a second sputtering chamber wherein a plasma is generated principally by at least two electrodes associated therewith;
• and
• depositing a second layer comprising a metal onto said first layer utilizing said plasma generated by said at least two electrodes.

A method for sputter filling a contact hole having an aspect ratio of at least 2:1 and formed in a dielectric layer formed over a substrate including a silicon portion adjacent a bottom portion of said contact hole, comprising the steps of:

• a first step performed in a high-density plasma in a first sputtering chamber of sputter depositing over said substrate including said contact hole a first layer comprising metallic titanium, a high-density plasma being defined as a plasma having an average ionization density of greater than 1011cm−3 throughout a region said plasma fills;
• a second step performed in a high-density plasma in said first sputtering chamber of sputter depositing over said first layer a second layer comprising TiN;
• a third step performed in said first sputtering chamber of sputter depositing over said second layer a third layer having an upper portion comprising metallic titanium;
• and
• a fourth step performed in a second sputtering chamber of sputter depositing over said third layer a fourth layer principally comprising aluminum, wherein said fourth step is performed in a plasma principally generated by a DC electrical signal applied between a sputter target comprising aluminum and a pedestal supporting said substrate.

A method of forming an interconnect over a dielectric layer having no holes therethrough with aspect ratios of greater than 2:1, comprising the steps of:

• depositing in a high-density plasma a liner layer comprising a compound of a refractory metal over an dielectric layer, a high-density plasma being defined as a plasma having an average ionization density of greater than 1011cm−3 throughout a region said plasma fills;
• sputter depositing a metal layer over said liner layer in a plasma having a smaller plasma density than that of said high-density plasma;
• and
• photolithographically defining said metal layer into a horizontally extending electrical interconnect.

A method of sputtering a metal into a hole formed in a dielectric layer formed on a substrate and having an aspect ratio of at least 2:1, comprising the steps of:

• a first step of sputter depositing onto said substrate a first layer comprising a compound of a refractory metal in a high-density plasma, a high-density plasma being defined as a plasma having an average ionization density of greater than 1011cm−3 throughout a region said plasma fills;
• and
• a second step of sputter depositing over said first layer a second, metallic layer performed with a plasma having a density substantially smaller than said high-density plasma of said first step;
• wherein said substrate includes an oxide layer with a hole extending downwardly from an upper surface thereof,
• wherein said first layer is coated onto sides of said hole,
• wherein said second layer fills said hole,
• wherein said second depositing step comprises:
• a first substep of sputter depositing a first sublayer while said substrate is held at a first temperature;
• and
• a second substep of sputter depositing a second sublayer while said substrate is held at a second temperature higher than said first temperature and
• wherein said metal layer comprises aluminum and wherein said second temperature is less than 400° C.

A method of sputtering a metal into a hole formed in a dielectric layer formed on a substrate and having an aspect ratio of at least 2:1, comprising the steps of:

• a first step of sputter depositing onto said substrate a first layer comprising a compound of a refractory metal in a high-density plasma a high-density plasma, being defined as a plasma having an average ionization density of greater than 1011cm−3 throughout a region said plasma fills;
• and
• a second step of sputter depositing over said first layer a second, metallic layer performed with a plasma having a density substantially smaller than said high-density plasma of said first step, wherein said substrate includes an oxide layer with a hole extending downwardly from an upper surface thereof,
• wherein said first layer is coated onto sides of said hole,
• wherein said second layer fills said hole,
• wherein said second depositing step comprises:
• a first substep of sputter depositing a first sublayer while said substrate is held at a first temperature;
• and
• a second substep of sputter depositing a second sublayer while said substrate is held at a second temperature higher than said first temperature, and
• wherein said metal layer comprises aluminum and wherein said second temperature is in a range of 300 to less than 400° C.

A method for sputter filling a contact hole formed in a dielectric layer formed over a substrate including a silicon portion adjacent a bottom portion of said contact hole, comprising the steps of:

• a first step performed in a high-density plasma of sputter depositing over said substrate including said contact hole a first layer comprising metallic tantalum, a high-density plasma being defined as a plasma having an average ionization density of greater than 1011cm−3 throughout a region said plasma fills;
• a second step performed in a high-density plasma of sputter depositing over said first layer a second layer comprising tantalum nitride;
• a third step of sputter depositing over said second layer a third layer having an upper portion comprising metallic tantalum;
• and
• a fourth step of sputter depositing over said third layer a fourth layer principally comprising copper.