H10D 64/511
For igfets
Official title: {for IGFETs}
H10D64/511 (For igfets) appears on 16,291 US grants and 18,908 published applications in this corpus.
Search patents in H10D- Granted patents
- 16,291
- Published applications
- 18,908
- Assignees
- 1,427
- Inventors
- 16,620
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 2 | 0 |
| 1978 | 7 | 0 |
| 1979 | 6 | 0 |
| 1980 | 16 | 0 |
| 1981 | 18 | 0 |
| 1982 | 6 | 0 |
| 1983 | 15 | 0 |
| 1984 | 9 | 0 |
| 1985 | 15 | 0 |
| 1986 | 10 | 0 |
| 1987 | 14 | 0 |
| 1988 | 14 | 0 |
| 1989 | 21 | 0 |
| 1990 | 20 | 0 |
| 1991 | 34 | 0 |
| 1992 | 40 | 0 |
| 1993 | 45 | 0 |
| 1994 | 57 | 0 |
| 1995 | 62 | 0 |
| 1996 | 51 | 0 |
| 1997 | 70 | 0 |
| 1998 | 104 | 0 |
| 1999 | 112 | 0 |
| 2000 | 145 | 0 |
| 2001 | 140 | 69 |
| 2002 | 149 | 204 |
| 2003 | 193 | 190 |
| 2004 | 202 | 245 |
| 2005 | 174 | 271 |
| 2006 | 195 | 345 |
| 2007 | 186 | 379 |
| 2008 | 211 | 427 |
| 2009 | 256 | 427 |
| 2010 | 362 | 500 |
| 2011 | 435 | 504 |
| 2012 | 434 | 616 |
| 2013 | 522 | 665 |
| 2014 | 725 | 917 |
| 2015 | 942 | 1224 |
| 2016 | 1151 | 1272 |
| 2017 | 1213 | 1159 |
| 2018 | 1065 | 1137 |
| 2019 | 1153 | 1193 |
| 2020 | 1077 | 1189 |
| 2021 | 917 | 998 |
| 2022 | 880 | 1122 |
| 2023 | 762 | 1086 |
| 2024 | 773 | 1049 |
| 2025 | 820 | 1024 |
| 2026 | 456 | 696 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Display device and electronic device6 Oct 2026US 12,755,707 B2Semiconductor Energy Laboratory Co.Ltd.
- Vertical transistors with backside power delivery6 Oct 2026US 12,757,371 B2Apple Inc.
- Memory device having improved P—N junction and manufacturing method thereof6 Oct 2026US 12,757,377 B2Nanya Technology Corporation
- Memory device having improved P-N junction and manufacturing method thereof6 Oct 2026US 12,757,380 B2Nanya Technology Corporation
- Semiconductor device6 Oct 2026US 12,757,435 B2Rohm Co., Ltd.
- Controlled doping in a gate dielectric layer8 Oct 2026US 2026/0313932 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method to implant p-type and/or n-type rings in a semiconductor device8 Oct 2026US 2026/0313952 A1Allegro MicroSystems, LLC
- Nitride semiconductor device and manufacturing method of nitride semiconductor device8 Oct 2026US 2026/0313996 A1Wavetek Microelectronics Corporation
- Semiconductor structure having self-aligned insulating feature and methods for manufacturing the same8 Oct 2026US 2026/0314012 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and methods of manufacturing the semiconductor device8 Oct 2026US 2026/0314019 A1SK hynix Inc.
Most cited
By later US patents
- Vertical gate all around (VGAA) devices and methods of manufacturing the same987US 9,536,738 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Self-aligned wrapped-around structure876US 9,209,247 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Wrap-around contact550US 9,443,769 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Power semiconductor devices having improved high frequency switching and breakdown characteristics442US 5,998,833 ANorth Carolina State University · 1999