H10D 64/311
Gate electrodes for field-effect devices
Official title: {Gate electrodes for field-effect devices}
H10D64/311 (Gate electrodes for field-effect devices) appears on 17,641 US grants and 20,403 published applications in this corpus.
Search patents in H10D- Granted patents
- 17,641
- Published applications
- 20,403
- Assignees
- 1,575
- Inventors
- 18,019
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 9 | 0 |
| 1977 | 7 | 0 |
| 1978 | 9 | 0 |
| 1979 | 10 | 0 |
| 1980 | 22 | 0 |
| 1981 | 19 | 0 |
| 1982 | 14 | 0 |
| 1983 | 17 | 0 |
| 1984 | 11 | 0 |
| 1985 | 22 | 0 |
| 1986 | 14 | 0 |
| 1987 | 20 | 0 |
| 1988 | 20 | 0 |
| 1989 | 33 | 0 |
| 1990 | 34 | 0 |
| 1991 | 49 | 0 |
| 1992 | 51 | 0 |
| 1993 | 56 | 0 |
| 1994 | 70 | 0 |
| 1995 | 76 | 0 |
| 1996 | 55 | 0 |
| 1997 | 88 | 0 |
| 1998 | 114 | 0 |
| 1999 | 127 | 0 |
| 2000 | 160 | 0 |
| 2001 | 149 | 73 |
| 2002 | 164 | 220 |
| 2003 | 204 | 209 |
| 2004 | 220 | 264 |
| 2005 | 183 | 297 |
| 2006 | 212 | 377 |
| 2007 | 195 | 412 |
| 2008 | 232 | 464 |
| 2009 | 288 | 475 |
| 2010 | 388 | 536 |
| 2011 | 482 | 564 |
| 2012 | 475 | 685 |
| 2013 | 579 | 740 |
| 2014 | 803 | 1000 |
| 2015 | 1006 | 1276 |
| 2016 | 1222 | 1323 |
| 2017 | 1274 | 1229 |
| 2018 | 1118 | 1186 |
| 2019 | 1205 | 1262 |
| 2020 | 1147 | 1276 |
| 2021 | 975 | 1082 |
| 2022 | 932 | 1221 |
| 2023 | 824 | 1182 |
| 2024 | 848 | 1150 |
| 2025 | 909 | 1130 |
| 2026 | 500 | 770 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Display device and electronic device6 Oct 2026US 12,755,707 B2Semiconductor Energy Laboratory Co.Ltd.
- Vertical transistors with backside power delivery6 Oct 2026US 12,757,371 B2Apple Inc.
- Memory device having improved P—N junction and manufacturing method thereof6 Oct 2026US 12,757,377 B2Nanya Technology Corporation
- Memory device having improved P-N junction and manufacturing method thereof6 Oct 2026US 12,757,380 B2Nanya Technology Corporation
- Nitride-based bidirectional switching device and method for manufacturing the same6 Oct 2026US 12,757,426 B2Innoscience (Suzhou) Semiconductor Co., Ltd.
- High electron mobility transistor and method for forming the same8 Oct 2026US 2026/0313930 A1United Microelectronics Corp.
- Controlled doping in a gate dielectric layer8 Oct 2026US 2026/0313932 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method to implant p-type and/or n-type rings in a semiconductor device8 Oct 2026US 2026/0313952 A1Allegro MicroSystems, LLC
- Nitride semiconductor device and manufacturing method of nitride semiconductor device8 Oct 2026US 2026/0313996 A1Wavetek Microelectronics Corporation
- Semiconductor structure having self-aligned insulating feature and methods for manufacturing the same8 Oct 2026US 2026/0314012 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Vertical gate all around (VGAA) devices and methods of manufacturing the same987US 9,536,738 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Self-aligned wrapped-around structure876US 9,209,247 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Wrap-around contact550US 9,443,769 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Power semiconductor devices having improved high frequency switching and breakdown characteristics442US 5,998,833 ANorth Carolina State University · 1999