H10D 64/27
Electrodes not carrying the current to be rectified, amplified, oscillated or switched
Official title: Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
H10D64/27 (Electrodes not carrying the current to be rectified, amplified, oscillated or switched) appears on 18,618 US grants and 21,441 published applications in this corpus.
Search patents in H10D- Granted patents
- 18,618
- Published applications
- 21,441
- Assignees
- 1,676
- Inventors
- 19,214
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 15 | 0 |
| 1977 | 10 | 0 |
| 1978 | 12 | 0 |
| 1979 | 14 | 0 |
| 1980 | 27 | 0 |
| 1981 | 22 | 0 |
| 1982 | 17 | 0 |
| 1983 | 21 | 0 |
| 1984 | 17 | 0 |
| 1985 | 25 | 0 |
| 1986 | 21 | 0 |
| 1987 | 30 | 0 |
| 1988 | 25 | 0 |
| 1989 | 46 | 0 |
| 1990 | 50 | 0 |
| 1991 | 60 | 0 |
| 1992 | 59 | 0 |
| 1993 | 60 | 0 |
| 1994 | 79 | 0 |
| 1995 | 83 | 0 |
| 1996 | 63 | 0 |
| 1997 | 91 | 0 |
| 1998 | 126 | 0 |
| 1999 | 134 | 0 |
| 2000 | 168 | 0 |
| 2001 | 158 | 76 |
| 2002 | 173 | 231 |
| 2003 | 217 | 219 |
| 2004 | 228 | 279 |
| 2005 | 197 | 325 |
| 2006 | 226 | 397 |
| 2007 | 205 | 426 |
| 2008 | 240 | 474 |
| 2009 | 296 | 483 |
| 2010 | 398 | 542 |
| 2011 | 489 | 578 |
| 2012 | 483 | 693 |
| 2013 | 595 | 766 |
| 2014 | 826 | 1029 |
| 2015 | 1049 | 1330 |
| 2016 | 1265 | 1369 |
| 2017 | 1321 | 1271 |
| 2018 | 1160 | 1239 |
| 2019 | 1260 | 1349 |
| 2020 | 1222 | 1359 |
| 2021 | 1032 | 1143 |
| 2022 | 991 | 1308 |
| 2023 | 886 | 1287 |
| 2024 | 914 | 1239 |
| 2025 | 985 | 1218 |
| 2026 | 527 | 811 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Display device and electronic device6 Oct 2026US 12,755,707 B2Semiconductor Energy Laboratory Co.Ltd.
- Vertical transistors with backside power delivery6 Oct 2026US 12,757,371 B2Apple Inc.
- Memory device having improved P—N junction and manufacturing method thereof6 Oct 2026US 12,757,377 B2Nanya Technology Corporation
- Memory device having improved P-N junction and manufacturing method thereof6 Oct 2026US 12,757,380 B2Nanya Technology Corporation
- Nitride-based bidirectional switching device and method for manufacturing the same6 Oct 2026US 12,757,426 B2Innoscience (Suzhou) Semiconductor Co., Ltd.
- High electron mobility transistor and method for forming the same8 Oct 2026US 2026/0313930 A1United Microelectronics Corp.
- Controlled doping in a gate dielectric layer8 Oct 2026US 2026/0313932 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ldmos transistor design for providing immunity to cone defects8 Oct 2026US 2026/0313951 A1Microchip Technology Incorporated
- Method to implant p-type and/or n-type rings in a semiconductor device8 Oct 2026US 2026/0313952 A1Allegro MicroSystems, LLC
- Nitride semiconductor device and manufacturing method of nitride semiconductor device8 Oct 2026US 2026/0313996 A1Wavetek Microelectronics Corporation
Most cited
By later US patents
- Vertical gate all around (VGAA) devices and methods of manufacturing the same987US 9,536,738 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Self-aligned wrapped-around structure876US 9,209,247 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Wrap-around contact550US 9,443,769 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches538US 6,229,161 B1Stanford University · 2001