H10D 64/529
Electrodes for igfets contacting substrate regions
Official title: {Electrodes for IGFETs contacting substrate regions, e.g. for grounding or preventing parasitic effects}
H10D64/529 (Electrodes for igfets contacting substrate regions) appears on 70 US grants and 80 published applications in this corpus.
Search patents in H10D- Granted patents
- 70
- Published applications
- 80
- Assignees
- 60
- Inventors
- 218
- Latest grant
- 4 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 3 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 3 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 1 | 0 |
| 2004 | 0 | 0 |
| 2005 | 1 | 2 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 2 | 5 |
| 2010 | 1 | 2 |
| 2011 | 0 | 3 |
| 2012 | 3 | 4 |
| 2013 | 3 | 4 |
| 2014 | 3 | 2 |
| 2015 | 7 | 8 |
| 2016 | 8 | 3 |
| 2017 | 4 | 2 |
| 2018 | 0 | 2 |
| 2019 | 4 | 3 |
| 2020 | 2 | 1 |
| 2021 | 3 | 2 |
| 2022 | 1 | 6 |
| 2023 | 2 | 5 |
| 2024 | 2 | 5 |
| 2025 | 3 | 12 |
| 2026 | 2 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Power semiconductor device comprising a wide bandgap substrate4 Aug 2026US 12,701,776 B2Cambridge Gan Devices Limited
- Nitride-based semiconductor circuit and method for manufacturing the same13 Jan 2026US 12,527,063 B2Innoscience (Suzhou) Technology Co., Ltd.
- Mesa contact for MOS controlled power semiconductor device16 Dec 2025US 12,501,669 B2Infineon Technologies AG
- Structures with deep trench isolation regions for a high-voltage field-effect transistor27 May 2025US 12,317,557 B1Globalfoundries Singapore Pte. Ltd.
- Method for eliminating divot formation and semiconductor device manufactured using the same28 Jan 2025US 12,211,906 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Ldmos transistor design for providing immunity to cone defects8 Oct 2026US 2026/0313951 A1Microchip Technology Incorporated
- Nitride semiconductor device1 Oct 2026US 2026/0304903 A1Rohm Co., Ltd.
- Transistor having an independently controlled body contact region which has a reduced length to reduce parasitic capacitance16 Jul 2026US 2026/0206282 A1QUALCOMM Incorporated
- Semiconductor power device16 Jul 2026US 2026/0206283 A1VoltA Semiconductor, Inc.
- Gallium nitride based, integrated, bilateral switch power device with substrate-biasing diodes16 Apr 2026US 2026/0107562 A1STMicroelectronics International N. V.
Most cited
By later US patents
- Fabrication of schottky-barrier MOS FETs88US 4,485,550 AAT&T Bell Laboratories · 1984
- Damascene double gated transistors and related manufacturing methods84US 6,580,137 B2Boise State University · 2003
- Three-terminal power mosfet switch for use as synchronous rectifier or voltage clamp71US 5,744,994 ASiliconix Incorporated · 1998
- Three-terminal power MOSFET switch for use as synchronous rectifier or voltage clamp67US 5,929,690 ASiliconix Incorporated · 1999
- Field effect transistor57US 5,548,150 AKabushiki Kaisha Toshiba · 1996