Nitride semiconductor device

A nitride semiconductor device, comprising:

• a semiconductor substrate;
• an electron transit layer located above the semiconductor substrate;
• an electron supply layer located above the electron transit layer and having a larger band gap than the electron transit layer;
• a gate layer formed from a nitride semiconductor including an acceptor impurity and located above a part of the electron supply layer;
• a gate electrode located above the gate layer;
• a source electrode and a drain electrode located above the electron supply layer and separated from each other;
• a cell region in which a transistor, including the gate electrode, the source electrode, and the drain electrode, is arranged;
• a peripheral region surrounding the cell region, as viewed in a thickness direction of the semiconductor substrate;
• a nitride semiconductor layer formed from a nitride semiconductor including an acceptor impurity and located in the peripheral region;
• a second peripheral electrode located above the nitride semiconductor layer;
• and
• a first peripheral electrode located in the peripheral region, wherein
• the first peripheral electrode is electrically connected to the gate electrode, and
• the second peripheral electrode is electrically connected to the source electrode.