Nitride-based semiconductor circuit and method for manufacturing the same

A manufacturing method of a nitride-based semiconductor circuit comprising:

• providing a substrate structure, wherein the substrate structure comprises a first type semiconductor substrate having first dopants, and the first type semiconductor substrate has a first region and a second region adjacent to the first region;
• and a second type semiconductor substrate embedded in the second region of the first type semiconductor substrate, wherein a top surface of the first type semiconductor substrate and a top surface of the second type semiconductor substrate are coplanar, and the second type semiconductor substrate has second dopants to form a pn junction between the first type semiconductor substrate and the second type semiconductor substrate;
• forming a nitride-based heterostructure on the substrate structure;
• forming a plurality of connectors on the nitride-based heterostructure;
• etching through the nitride-based heterostructure;
• and
• forming a plurality of connecting vias;
• wherein the connecting vias comprises:
• a first interconnection electrically connecting the first region of the first type semiconductor substrate to one of the connectors;
• and
• a second interconnection electrically connecting the second type semiconductor substrate to another one of the connectors;
• wherein the connectors comprise a first and second source connectors, a first and second drain connectors, and a first and second gate connectors,
• wherein the first gate connector is located between the first source connector and the first drain connector, and the second gate connector is located between the second source connector and the second drain connector;
• wherein the manufacturing method further comprising forming a second patterned conductive layer disposed on the connectors,
• wherein the second patterned conductive layer electrically connects to the connectors, and the second patterned conductive layer has a plurality of pads, and one of the pads electrically connects to the first source connector and the second drain connector.

A nitride-based semiconductor circuit comprising:

• a substrate structure comprising:
• a first type semiconductor substrate having a first region and a second region adjacent to the first region;
• and
• a second type semiconductor substrate embedded in the second region of the first type semiconductor substrate, wherein a top surface of the first type semiconductor substrate and a top surface of the second type semiconductor substrate are substantially coplanar, and the first type semiconductor substrate has first dopants, and the second type semiconductor substrate has second dopants to form a pn junction between the first type semiconductor substrate and the second type semiconductor substrate;
• a nitride-based heterostructure disposed on the substrate structure,
• a plurality of connectors disposed on the nitride-based heterostructure;
• and
• a plurality of connecting vias going through the nitride-based heterostructure,
• wherein the connecting vias comprise:
• a first interconnection electrically connecting the first region of the first type semiconductor substrate to one of the connectors;
• and
• a second interconnection electrically connecting the second type semiconductor substrate to another one of the connectors;
• wherein the connectors comprise a first and second source connectors, a first and second drain connectors, and a first and second gate connectors,
• wherein the first gate connector is located between the first source connector and the first drain connector, and the second gate connector is located between the second source connector and the second drain connector;
• wherein the nitride-based semiconductor circuit further comprising:
• an oxide layer in contact with the second gate connector and isolated from the first gate connector;
• and
• a nitride layer in contact with the first gate connector.