Three-terminal power mosfet switch for use as synchronous rectifier or voltage clamp
AssigneeSiliconix Incorporated
InventorRichard K. Williams
Life of this patent
Estimating the term…
Loading patent…
AssigneeSiliconix Incorporated
InventorRichard K. Williams
Estimating the term…
An N-channel power MOSFET is fabricated with its source and body connected together and biased at a positive voltage with respect to its drain. The gate is controlled by a switch which alternately connects the gate to the source or to a voltage which turns the channel of the MOSFET fully on. When the gate is connected to the source, the device functions as a "pseudo-Schottky" diode which turns on at a lower voltage and provides a lower-resistance path than a conventional PN diode. When the gate is connected to the positive voltage the channel of the MOSFET is turned fully on. This MOSFET switch is particularly suitable for use as a synchronous rectifier in a power converter where it reduces the power loss and stored charge in the "break before make" interval (i.e., the interval between the turn-off of the shunt switch and the turn-on of the synchronous rectifier).
A semiconductor device comprising:
A power converter comprising:
Dependencies are inferred from the claim text.