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US 12,317,557 B1Granted
Structures with deep trench isolation regions for a high-voltage field-effect transistor
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorKyong Jin Hwang
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Abstract
Structures for a high-voltage field-effect transistor that include a deep trench isolation region and methods of forming such structures. The structure comprises a semiconductor substrate, a semiconductor layer on the semiconductor substrate, and a doped layer between the semiconductor layer and the semiconductor substrate. The structure further comprises a trench isolation region including a metal layer that extends through the semiconductor layer and the doped layer into the semiconductor substrate.
Claims20
A structure comprising:
- a semiconductor substrate;
- a semiconductor layer on the semiconductor substrate;
- a doped region in the semiconductor layer;
- a doped layer between the semiconductor layer and the semiconductor substrate;
- a first trench isolation region including a metal layer that extends through the semiconductor layer and the doped layer into the semiconductor substrate;
- and
- an interconnect structure including a metal feature, a first contact extending from the metal feature to the doped region, and a second contact extending from the metal feature to the metal layer of the first trench isolation region.
4 more elements
A method comprising:
- forming a semiconductor layer on a semiconductor substrate;
- forming a doped layer between the semiconductor layer and the semiconductor substrate;
- forming a trench isolation region including a metal layer that extends through the semiconductor layer and the doped layer into the semiconductor substrate;
- forming a doped region in the semiconductor layer;
- and
- forming an interconnect structure including a metal feature, a first contact extending from the metal feature to the doped region, and a second contact extending from the metal feature to the metal layer of the trench isolation region.
3 more elements
Dependencies are inferred from the claim text.