H10D 64/291
Gate electrodes for thyristors
Official title: {Gate electrodes for thyristors}
H10D64/291 (Gate electrodes for thyristors) appears on 104 US grants and 57 published applications in this corpus.
Search patents in H10D- Granted patents
- 104
- Published applications
- 57
- Assignees
- 58
- Inventors
- 172
- Latest grant
- 30 Dec 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 3 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 3 | 0 |
| 1985 | 3 | 0 |
| 1986 | 4 | 0 |
| 1987 | 4 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 3 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 3 | 0 |
| 2002 | 2 | 2 |
| 2003 | 4 | 1 |
| 2004 | 2 | 1 |
| 2005 | 1 | 2 |
| 2006 | 1 | 2 |
| 2007 | 2 | 2 |
| 2008 | 1 | 0 |
| 2009 | 1 | 1 |
| 2010 | 2 | 1 |
| 2011 | 0 | 2 |
| 2012 | 2 | 0 |
| 2013 | 4 | 4 |
| 2014 | 3 | 6 |
| 2015 | 2 | 2 |
| 2016 | 4 | 1 |
| 2017 | 1 | 5 |
| 2018 | 5 | 4 |
| 2019 | 3 | 2 |
| 2020 | 3 | 3 |
| 2021 | 2 | 2 |
| 2022 | 2 | 4 |
| 2023 | 2 | 4 |
| 2024 | 1 | 5 |
| 2025 | 7 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Bidirectional thyristor device30 Dec 2025US 12,513,928 B2Hitachi Energy Ltd
- Module comprising a switchable bypass device30 Dec 2025US 12,513,975 B2Hitachi Energy Ltd
- Bidirectional thyristor device with asymmetric characteristics9 Dec 2025US 12,495,565 B2Hitachi Energy Ltd
- Power semiconductor device4 Nov 2025US 12,464,749 B2Hitachi Energy Ltd
- Reverse conducting power semiconductor device and method for manufacturing the same23 Sep 2025US 12,426,349 B2Hitachi Energy Ltd
- Substrate-less silicon controlled rectifier (scr) integrated circuit structures14 Aug 2025US 2025/0261452 A1Intel Corporation
- High noise immunity triac structure4 Jul 2024US 2024/0222481 A1Littelfuse Semiconductor (Wuxi) Co., Ltd.
- Triac device with high commutating capability20 Jun 2024US 2024/0204088 A1Littelfuse Semiconductor (Wuxi) Co., Ltd.
- Semiconductor device22 Feb 2024US 2024/0063265 A1
- Bidirectional thyristor device1 Feb 2024US 2024/0038880 A1Hitachi Energy Switzerland AG
Most cited
By later US patents
- Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches538US 6,229,161 B1Stanford University · 2001
- Thyristor-based device over substrate surface81US 6,653,174 B1T-Ram, Inc. · 2003
- Semiconductor device with deep grip accessible via the surface and process for manufacturing same33US 4,520,552 AThomson-CSF · 1985
- Insulated-gate thyristor32US 5,464,994 AKabushiki Kaisha Toshiba · 1995
- Gate turn-off thyristor with switching control field effect transistor28US 4,963,972 AKabushiki Kaisha Toshiba · 1990