Bidirectional thyristor device

A bidirectional thyristor device comprising:

• a semiconductor body extending between a first main surface and a second main surface,
• a first main electrode arranged on the first main surface,
• a second main electrode arranged on the second main surface,
• a first gate electrode arranged on the first main surface,
• a second gate electrode arranged on the second main surface, wherein
• the first main electrode comprises a plurality of first segments that are spaced apart from one another, wherein at least some of the first segments are completely surrounded by the first gate electrode in a view onto the first main surface, and
• the second main electrode comprises a plurality of second segments that are spaced apart from one another, wherein at least some of the second segments are completely surrounded by the second gate electrode in a view onto the second main surface, and
• one of the plurality of first segments acts as a cathode for a first thyristor functional element via the at least one first emitter region and as an anode for a second thyristor functional element via at least one first emitter short region.