Insulated-gate thyristor

An insulated-gate thyristor comprising:

• a base layer of a first conductivity type, having first and second major surfaces;
• at least a pair of first grooves formed in the first major surface of said base layer and opposing each other and spaced apart by a short distance;
• first insulated gate electrodes formed within said grooves;
• at least a pair of second grooves formed in the second major surface of said base layer, and opposing each other and spaced apart by a short distance;
• second insulated gate electrodes formed within said second grooves;
• a first channel layer formed in that entire portion of said base layer which is located between said first grooves;
• a first emitter region of a first conductivity type, formed in the entire surface of said first channel layer between said first grooves,
• a second channel layer formed in that entire portion of said base layer which is located between said second grooves;
• and
• a second emitter region of the second conductivity type, formed in the entire surface of said second channel layer between said second grooves.

An insulated-gate thyristor comprising:

• a first base layer of a first conductivity type, having first and second major surfaces;
• a second base layer of a second conductivity type, formed in the first major surface of said first base layer;
• a channel layer of the first conductivity type, formed in the surface of said second base layer;
• a first emitter region of the first conductivity type, formed in the surface of said channel layer;
• a second emitter region of the second conductivity type, formed in the second major surface of said first base layer;
• at least a pair of grooves extending from said first emitter region into said first base layer, and opposing each other and spaced apart by a predetermined distance;
• and
• insulated gate electrodes formed in said grooves.

An insulated-gate thyristor comprising:

• a first base layer of a first conductivity type, having first and second major surfaces;
• a second base layer of a second conductivity type, formed in the first major surface of said first base layer;
• a first emitter region of the first conductivity type, formed in the surface of said second base layer;
• a channel layer of the second conductivity type, formed in the second major surface of said first base layer;
• a second emitter region of the second conductivity type, formed in the surface of said channel layer;
• at least a pair of grooves extending from said second emitter region into said channel layer, and opposing each other and spaced apart by a predetermined distance;
• and
• insulated gate electrodes formed in said grooves.

An insulated-gate thyristor comprising:

• a first base layer of a first conductivity type, having first and second major surfaces;
• a second base layer of a second conductivity type, formed in the first major surface of said first base layer;
• a first channel layer of the first conductivity type, formed in the surface of said second base layer;
• a second channel layer of the second conductivity type, formed on said first channel layer;
• a first emitter region of the first conductivity type, formed in said second channel layer;
• a second emitter region of the second conductivity type, formed in the second major surface of said first base layer;
• at least a pair of grooves extending from said first emitter region into said first base layer;
• and
• insulated gate electrodes formed in said grooves.