H10D 64/281
Base electrodes for bipolar transistors
Official title: {Base electrodes for bipolar transistors}
H10D64/281 (Base electrodes for bipolar transistors) appears on 493 US grants and 432 published applications in this corpus.
Search patents in H10D- Granted patents
- 493
- Published applications
- 432
- Assignees
- 169
- Inventors
- 836
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 3 | 0 |
| 1986 | 3 | 0 |
| 1987 | 8 | 0 |
| 1988 | 3 | 0 |
| 1989 | 14 | 0 |
| 1990 | 14 | 0 |
| 1991 | 10 | 0 |
| 1992 | 7 | 0 |
| 1993 | 4 | 0 |
| 1994 | 6 | 0 |
| 1995 | 2 | 0 |
| 1996 | 6 | 0 |
| 1997 | 2 | 0 |
| 1998 | 7 | 0 |
| 1999 | 4 | 0 |
| 2000 | 6 | 0 |
| 2001 | 6 | 3 |
| 2002 | 7 | 6 |
| 2003 | 6 | 7 |
| 2004 | 5 | 15 |
| 2005 | 11 | 21 |
| 2006 | 14 | 18 |
| 2007 | 6 | 12 |
| 2008 | 6 | 8 |
| 2009 | 5 | 2 |
| 2010 | 6 | 2 |
| 2011 | 6 | 5 |
| 2012 | 0 | 2 |
| 2013 | 9 | 9 |
| 2014 | 8 | 10 |
| 2015 | 21 | 32 |
| 2016 | 25 | 39 |
| 2017 | 35 | 29 |
| 2018 | 30 | 26 |
| 2019 | 29 | 33 |
| 2020 | 30 | 31 |
| 2021 | 29 | 22 |
| 2022 | 16 | 24 |
| 2023 | 28 | 30 |
| 2024 | 21 | 16 |
| 2025 | 16 | 25 |
| 2026 | 6 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Power device integration on a common substrate25 Aug 2026US 12,720,815 B2Silanna Asia Pte Ltd
- Semiconductor device5 May 2026US 12,622,006 B2Samsung Electronics Co., Ltd.
- Bipolar transistor structure and radio frequency amplifier28 Apr 2026US 12,615,789 B1Xiamen Sanan Integrated Circuit Co., Ltd.
- Semiconductor device including auxiliary electrode that is electrically connected to a control electrode via a second electrode layer14 Apr 2026US 12,604,491 B2Rohm Co., Ltd.
- High frequency heterojunction bipolar transistor devices31 Mar 2026US 12,593,461 B2Analog Devices, Inc.
- Semiconductor device11 Jun 2026US 2026/0164687 A1Samsung Electronics Co., Ltd.
- Bipolar junction transistor with direct backside contact4 Jun 2026US 2026/0156849 A1International Business Machines Corporation
- Bipolar transistor structure and radio frequency amplifier30 Apr 2026US 2026/0122936 A1Xiamen Sanan Integrated Circuit Co., Ltd.
- Heterojunction bipolar transistor, radio frequency module, and communication device12 Mar 2026US 2026/0075891 A1Xiamen Sanan Integrated Circuit Co., Ltd.
- Cascaded bipolar junction transistor and methods of forming the same15 Jan 2026US 2026/0020269 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Field plate in heterojunction bipolar transistor with improved break-down voltage512US 9,324,846 B1Globalfoundries Inc. · 2016
- Stacked devices105US 6,020,250 AInternational Business Machines Corporation · 2000
- Sidewall contact bipolar transistor with controlled lateral spread of selectively grown epitaxial layer89US 5,166,767 ANational Semiconductor Corporation · 1992
- Bipolar transistor and semiconductor device having the same70US 6,611,043 B2NEC Corporation · 2003
- Method of making integrated circuits using metal silicide contacts63US 4,521,952 AInternational Business Machines Corporation · 1985