Bipolar transistor and semiconductor device having the same
AssigneeNEC Corporation
InventorTomio Takiguchi
Life of this patent
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Abstract
A bipolar transistor is provided with a collector layer of a first conductive type, a base layer of a second conductive type formed at a surface of the collector layer, and an emitter layer of the first conductive type formed at a surface of the base layer. An emitter electrode is connected to the emitter layer. Base electrodes are connected to the base layer and surround the emitter electrode. Emitter electrodes are connected to the collector layer and surround the base electrodes.
Claims6
A semiconductor device comprising a plurality of bipolar transistors arrayed in a square matrix formation where the number of said bipolar transistors arrayed in a vertical direction is equal to the number of said bipolar transistors arrayed in a horizontal direction, each of said bipolar transistors comprising:
- a collector region of a first conductivity type;
- a base region of a second conductivity type formed on said collector region and having a square shape as seen in plan view;
- an emitter region of the first conductivity type formed in a center on a surface of said base region and having a square shape as seen in plan view;
- at least one emitter electrode connected to said emitter region,
- at least one base electrode connected to said base region and provided in such as way as to surround said at least one emitter electrode;
- and
- a collector electrode connected to said collector region and provided in such a way as to surround said at least one base electrode,
- said collector regions of all of said bipolar transistors being formed of a single semiconductor layer.
Dependencies are inferred from the claim text.