Semiconductor device

A semiconductor device comprising:

• a semiconductor body having a first surface and a second surface, which are opposite to each other,
• wherein the semiconductor body comprises:
• a first well region having a first conductivity type;
• a second well region and a third well region, which are spaced apart from each other in a first direction with the first well region interposed therebetween and have a second conductivity type different from the first conductivity type;
• a plurality of first doped regions spaced apart from each other in a second direction intersecting the first direction in the first well region, the plurality of first doped regions having the first conductivity type;
• first contacts on the plurality of first doped regions, respectively;
• a second doped region, which is adjacent to the second well region and has the second conductivity type;
• and
• a third doped region, which is adjacent to the third well region and has the second conductivity type,
• wherein the second well region is between the first well region and the second doped region, and the third well region is between the first well region and the third doped region,
• wherein the first surface of the semiconductor body comprises top surfaces of the first to third well regions, the plurality of first doped regions, the second doped region and the third doped region, and
• wherein the second surface of the semiconductor body comprises bottom surfaces of the first to third well regions, the plurality of first doped regions, the second doped region and the third doped region.