H10D 64/517
Characterised by the conducting layers
Official title: {characterised by the conducting layers}
H10D64/517 (Characterised by the conducting layers) appears on 7,675 US grants and 8,918 published applications in this corpus.
Search patents in H10D- Granted patents
- 7,675
- Published applications
- 8,918
- Assignees
- 910
- Inventors
- 9,973
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 0 | 0 |
| 1978 | 3 | 0 |
| 1979 | 4 | 0 |
| 1980 | 4 | 0 |
| 1981 | 8 | 0 |
| 1982 | 3 | 0 |
| 1983 | 7 | 0 |
| 1984 | 6 | 0 |
| 1985 | 7 | 0 |
| 1986 | 3 | 0 |
| 1987 | 7 | 0 |
| 1988 | 6 | 0 |
| 1989 | 9 | 0 |
| 1990 | 8 | 0 |
| 1991 | 14 | 0 |
| 1992 | 19 | 0 |
| 1993 | 18 | 0 |
| 1994 | 24 | 0 |
| 1995 | 28 | 0 |
| 1996 | 21 | 0 |
| 1997 | 37 | 0 |
| 1998 | 61 | 0 |
| 1999 | 74 | 0 |
| 2000 | 90 | 0 |
| 2001 | 76 | 32 |
| 2002 | 79 | 112 |
| 2003 | 119 | 113 |
| 2004 | 116 | 141 |
| 2005 | 84 | 136 |
| 2006 | 107 | 159 |
| 2007 | 100 | 187 |
| 2008 | 81 | 181 |
| 2009 | 114 | 193 |
| 2010 | 169 | 251 |
| 2011 | 213 | 206 |
| 2012 | 213 | 283 |
| 2013 | 233 | 268 |
| 2014 | 314 | 366 |
| 2015 | 374 | 499 |
| 2016 | 467 | 504 |
| 2017 | 510 | 522 |
| 2018 | 477 | 539 |
| 2019 | 544 | 607 |
| 2020 | 556 | 582 |
| 2021 | 450 | 459 |
| 2022 | 403 | 548 |
| 2023 | 368 | 542 |
| 2024 | 376 | 547 |
| 2025 | 417 | 545 |
| 2026 | 250 | 396 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Vertical transistors with backside power delivery6 Oct 2026US 12,757,371 B2Apple Inc.
- Memory device having improved P—N junction and manufacturing method thereof6 Oct 2026US 12,757,377 B2Nanya Technology Corporation
- Memory device having improved P-N junction and manufacturing method thereof6 Oct 2026US 12,757,380 B2Nanya Technology Corporation
- Semiconductor device6 Oct 2026US 12,757,435 B2Rohm Co., Ltd.
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Nitride semiconductor device and manufacturing method of nitride semiconductor device8 Oct 2026US 2026/0313996 A1Wavetek Microelectronics Corporation
- Semiconductor structure having self-aligned insulating feature and methods for manufacturing the same8 Oct 2026US 2026/0314012 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of using semiconductor device and method of making8 Oct 2026US 2026/0314021 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0314027 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and methods of forming the same8 Oct 2026US 2026/0314045 A1
Most cited
By later US patents
- Self-aligned wrapped-around structure876US 9,209,247 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Method of forming dual metal gate structures or CMOS devices325US 6,291,282 B1Texas Instruments Incorporated · 2001
- Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry288US 5,072,266 ASiliconix Incorporated · 1991
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008