H10D 64/518
Characterised by their lengths or sectional shapes
Official title: {characterised by their lengths or sectional shapes}
H10D64/518 (Characterised by their lengths or sectional shapes) appears on 4,122 US grants and 4,933 published applications in this corpus.
Search patents in H10D- Granted patents
- 4,122
- Published applications
- 4,933
- Assignees
- 582
- Inventors
- 6,410
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 4 | 0 |
| 1984 | 2 | 0 |
| 1985 | 6 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 4 | 0 |
| 1989 | 4 | 0 |
| 1990 | 3 | 0 |
| 1991 | 8 | 0 |
| 1992 | 13 | 0 |
| 1993 | 11 | 0 |
| 1994 | 16 | 0 |
| 1995 | 16 | 0 |
| 1996 | 9 | 0 |
| 1997 | 14 | 0 |
| 1998 | 24 | 0 |
| 1999 | 41 | 0 |
| 2000 | 56 | 0 |
| 2001 | 48 | 12 |
| 2002 | 35 | 56 |
| 2003 | 60 | 37 |
| 2004 | 43 | 56 |
| 2005 | 29 | 56 |
| 2006 | 38 | 66 |
| 2007 | 41 | 108 |
| 2008 | 35 | 75 |
| 2009 | 52 | 89 |
| 2010 | 73 | 139 |
| 2011 | 112 | 84 |
| 2012 | 116 | 123 |
| 2013 | 91 | 145 |
| 2014 | 132 | 174 |
| 2015 | 193 | 256 |
| 2016 | 240 | 270 |
| 2017 | 262 | 288 |
| 2018 | 289 | 301 |
| 2019 | 303 | 359 |
| 2020 | 324 | 348 |
| 2021 | 267 | 271 |
| 2022 | 245 | 334 |
| 2023 | 220 | 356 |
| 2024 | 225 | 308 |
| 2025 | 254 | 344 |
| 2026 | 153 | 278 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Vertical transistors with backside power delivery6 Oct 2026US 12,757,371 B2Apple Inc.
- Gate structure in high-κ metal gate technology6 Oct 2026US 12,757,471 B2Taiwan Semiconcutor Manufacturing Company, Ltd.
- Monolithic field-effect transistor-antenna device for terahertz wave detection with independent performance parameters29 Sep 2026US 12,751,037 B2Unist (Ulsan National Institute of Science and Technology)
- Gate feature in FinFET device29 Sep 2026US 12,751,070 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Split gate trench device29 Sep 2026US 12,751,071 B2Excelliance MOS Corporation
- Nitride semiconductor device and manufacturing method of nitride semiconductor device8 Oct 2026US 2026/0313996 A1Wavetek Microelectronics Corporation
- Semiconductor structure having self-aligned insulating feature and methods for manufacturing the same8 Oct 2026US 2026/0314012 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0314027 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and methods of forming the same8 Oct 2026US 2026/0314045 A1
- Lateral mosfet having a vertical channel1 Oct 2026US 2026/0304826 A1Microchip Technology Incorporated
Most cited
By later US patents
- Self-aligned wrapped-around structure876US 9,209,247 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Method of forming dual metal gate structures or CMOS devices325US 6,291,282 B1Texas Instruments Incorporated · 2001
- Method for forming an MOS transistor having a metallic gate electrode that is formed after the formation of self-aligned source and drain regions258US 5,960,270 AMotorola, Inc. · 1999
- Dynamic array architecture227US 7,446,352 B2Tela Innovations, Inc. · 2008