H10D 64/512
Disposition of the gate electrodes
Official title: {Disposition of the gate electrodes, e.g. buried gates}
H10D64/512 (Disposition of the gate electrodes) appears on 6,330 US grants and 7,699 published applications in this corpus.
Search patents in H10D- Granted patents
- 6,330
- Published applications
- 7,699
- Assignees
- 770
- Inventors
- 7,753
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 3 | 0 |
| 1979 | 3 | 0 |
| 1980 | 9 | 0 |
| 1981 | 6 | 0 |
| 1982 | 1 | 0 |
| 1983 | 7 | 0 |
| 1984 | 3 | 0 |
| 1985 | 5 | 0 |
| 1986 | 5 | 0 |
| 1987 | 5 | 0 |
| 1988 | 4 | 0 |
| 1989 | 5 | 0 |
| 1990 | 5 | 0 |
| 1991 | 8 | 0 |
| 1992 | 7 | 0 |
| 1993 | 3 | 0 |
| 1994 | 10 | 0 |
| 1995 | 8 | 0 |
| 1996 | 7 | 0 |
| 1997 | 3 | 0 |
| 1998 | 14 | 0 |
| 1999 | 13 | 0 |
| 2000 | 17 | 0 |
| 2001 | 15 | 11 |
| 2002 | 19 | 18 |
| 2003 | 21 | 26 |
| 2004 | 27 | 37 |
| 2005 | 25 | 47 |
| 2006 | 35 | 79 |
| 2007 | 30 | 113 |
| 2008 | 52 | 158 |
| 2009 | 75 | 152 |
| 2010 | 130 | 182 |
| 2011 | 160 | 238 |
| 2012 | 156 | 275 |
| 2013 | 223 | 299 |
| 2014 | 321 | 404 |
| 2015 | 411 | 561 |
| 2016 | 530 | 630 |
| 2017 | 574 | 548 |
| 2018 | 461 | 478 |
| 2019 | 494 | 513 |
| 2020 | 470 | 521 |
| 2021 | 391 | 434 |
| 2022 | 407 | 464 |
| 2023 | 317 | 442 |
| 2024 | 323 | 425 |
| 2025 | 335 | 394 |
| 2026 | 175 | 250 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Display device and electronic device6 Oct 2026US 12,755,707 B2Semiconductor Energy Laboratory Co.Ltd.
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,470 B2Semes Co., Ltd.
- Three-dimensional (3D) trenched metal-oxide-semiconductor field-effect transistor (MOSFET) device including first doped wells and second doped wells and method for fabricating the same29 Sep 2026US 12,751,043 B2Taipei Anjet Corporation
- Split gate trench device29 Sep 2026US 12,751,071 B2Excelliance MOS Corporation
- Method to implant p-type and/or n-type rings in a semiconductor device8 Oct 2026US 2026/0313952 A1Allegro MicroSystems, LLC
- Semiconductor structure having self-aligned insulating feature and methods for manufacturing the same8 Oct 2026US 2026/0314012 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and methods of manufacturing the semiconductor device8 Oct 2026US 2026/0314019 A1SK hynix Inc.
- Semiconductor device and method for manufacturing the same8 Oct 2026US 2026/0314282 A1MagnaChip Semiconductor, Ltd.
- Double gate transistor device and method of operating1 Oct 2026US 2026/0303088 A1Infineon Technologies Austria AG
Most cited
By later US patents
- Vertical gate all around (VGAA) devices and methods of manufacturing the same987US 9,536,738 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- High voltage semiconductor device381US 4,754,310 AU. S. Philips Corporation · 1988
- Field effect transistor and method of its manufacture371US 6,429,481 B1Fairchild Semiconductor Corporation · 2002
- Semiconductor devices exhibiting minimum on-resistance320US 4,941,026 AGeneral Electric Company · 1990
- Method for increasing the performance of trenched devices and the resulting structure264US 4,893,160 ASiliconix Incorporated · 1990