H10D 64/513
Within recesses in the substrate
Official title: {within recesses in the substrate, e.g. trench gates, groove gates or buried gates}
H10D64/513 (Within recesses in the substrate) appears on 5,052 US grants and 6,167 published applications in this corpus.
Search patents in H10D- Granted patents
- 5,052
- Published applications
- 6,167
- Assignees
- 627
- Inventors
- 6,082
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 3 | 0 |
| 1979 | 3 | 0 |
| 1980 | 9 | 0 |
| 1981 | 6 | 0 |
| 1982 | 1 | 0 |
| 1983 | 7 | 0 |
| 1984 | 3 | 0 |
| 1985 | 5 | 0 |
| 1986 | 5 | 0 |
| 1987 | 5 | 0 |
| 1988 | 4 | 0 |
| 1989 | 5 | 0 |
| 1990 | 5 | 0 |
| 1991 | 8 | 0 |
| 1992 | 7 | 0 |
| 1993 | 3 | 0 |
| 1994 | 10 | 0 |
| 1995 | 7 | 0 |
| 1996 | 7 | 0 |
| 1997 | 3 | 0 |
| 1998 | 14 | 0 |
| 1999 | 13 | 0 |
| 2000 | 17 | 0 |
| 2001 | 15 | 11 |
| 2002 | 18 | 18 |
| 2003 | 19 | 25 |
| 2004 | 27 | 34 |
| 2005 | 24 | 45 |
| 2006 | 31 | 76 |
| 2007 | 28 | 106 |
| 2008 | 48 | 147 |
| 2009 | 72 | 149 |
| 2010 | 123 | 155 |
| 2011 | 146 | 207 |
| 2012 | 145 | 250 |
| 2013 | 199 | 262 |
| 2014 | 273 | 334 |
| 2015 | 336 | 441 |
| 2016 | 390 | 439 |
| 2017 | 406 | 385 |
| 2018 | 330 | 355 |
| 2019 | 360 | 399 |
| 2020 | 355 | 399 |
| 2021 | 305 | 356 |
| 2022 | 336 | 376 |
| 2023 | 255 | 355 |
| 2024 | 245 | 333 |
| 2025 | 269 | 314 |
| 2026 | 145 | 196 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Three-dimensional (3D) trenched metal-oxide-semiconductor field-effect transistor (MOSFET) device including first doped wells and second doped wells and method for fabricating the same29 Sep 2026US 12,751,043 B2Taipei Anjet Corporation
- Split gate trench device29 Sep 2026US 12,751,071 B2Excelliance MOS Corporation
- Semiconductor device with voltage resistant structure22 Sep 2026US 12,745,431 B2Rohm Co., Ltd.
- Semiconductor device and method for manufacturing the same22 Sep 2026US 12,745,444 B2Denso Corporation
- Method to implant p-type and/or n-type rings in a semiconductor device8 Oct 2026US 2026/0313952 A1Allegro MicroSystems, LLC
- Semiconductor device and methods of manufacturing the semiconductor device8 Oct 2026US 2026/0314019 A1SK hynix Inc.
- Semiconductor device and method for manufacturing the same8 Oct 2026US 2026/0314282 A1MagnaChip Semiconductor, Ltd.
- Double gate transistor device and method of operating1 Oct 2026US 2026/0303088 A1Infineon Technologies Austria AG
- Power mosfet device having a source region embedded via epitaxial growth and manufacturing method for power mosfet device1 Oct 2026US 2026/0304823 A1Chongqing Alpha and Omega Semiconductor Limited
Most cited
By later US patents
- High voltage semiconductor device381US 4,754,310 AU. S. Philips Corporation · 1988
- Field effect transistor and method of its manufacture371US 6,429,481 B1Fairchild Semiconductor Corporation · 2002
- Semiconductor devices exhibiting minimum on-resistance320US 4,941,026 AGeneral Electric Company · 1990
- Method for increasing the performance of trenched devices and the resulting structure264US 4,893,160 ASiliconix Incorporated · 1990
- Methods of fabricating nitride-based transistors with a cap layer and a recessed gate237US 7,238,560 B2Cree, Inc. · 2007