H10B 12/0335
Making a connection between the transistor and the capacitor
Official title: {Making a connection between the transistor and the capacitor, e.g. plug}
H10B12/0335 (Making a connection between the transistor and the capacitor) appears on 2,571 US grants and 3,262 published applications in this corpus.
Search patents in H10B- Granted patents
- 2,571
- Published applications
- 3,262
- Assignees
- 190
- Inventors
- 3,544
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 3 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 5 | 0 |
| 2000 | 12 | 0 |
| 2001 | 133 | 65 |
| 2002 | 140 | 158 |
| 2003 | 107 | 125 |
| 2004 | 128 | 139 |
| 2005 | 92 | 127 |
| 2006 | 103 | 104 |
| 2007 | 90 | 88 |
| 2008 | 60 | 61 |
| 2009 | 51 | 53 |
| 2010 | 67 | 57 |
| 2011 | 39 | 60 |
| 2012 | 57 | 87 |
| 2013 | 49 | 55 |
| 2014 | 67 | 63 |
| 2015 | 79 | 98 |
| 2016 | 90 | 84 |
| 2017 | 67 | 50 |
| 2018 | 64 | 70 |
| 2019 | 76 | 101 |
| 2020 | 109 | 138 |
| 2021 | 126 | 170 |
| 2022 | 131 | 262 |
| 2023 | 172 | 282 |
| 2024 | 161 | 259 |
| 2025 | 184 | 279 |
| 2026 | 107 | 227 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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Most cited
By later US patents
- Methods of forming capacitors, DRAM arrays, and monolithic integrated circuits254US 6,306,705 B1Micron Technology, Inc. · 2001
- Films doped with carbon for use in integrated circuit technology244US 6,462,371 B1Micron Technology, Inc. · 2002
- Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same215US 5,392,189 AMicron Semiconductor, Inc. · 1995
- Method of etching silicon nitride by a mixture of CH2 F2, CH3F or CHF3 and an inert gas207US 6,376,386 B1Fujitsu Limited · 2002
- Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same174US 5,381,302 AMicron Semiconductor, Inc. · 1995