Semiconductor device and method for manufacturing the same
AssigneeSK hynix Inc.
InventorsSe Ra HWANG, Seung Wan CHU
Life of this patent
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Abstract
A semiconductor device including a vertical active region is disclosed. The semiconductor device includes an active region, one side of which is in contact with a bitline; a storage node contact configured to contact the other side of the active region; and an insulation pattern disposed between the storage node contact and another storage node contact adjacent to the storage node contact. The insulation pattern includes a first insulation pattern layer including silicon oxide; and a second insulation pattern layer including silicon nitride.
Claims20
A semiconductor device comprising:
- an active region, one side of which is in contact with a bitline;
- a storage node contact disposed to contact the other side of the active region;
- and
- an insulation pattern disposed between the storage node contact and another storage node contact adjacent to the storage node contact,
- wherein the insulation pattern includes a first insulation pattern layer including silicon oxide and a second insulation pattern layer including silicon nitride.
A method for manufacturing a semiconductor device, the method comprising:
- forming a pre-storage node contact layer over an active region;
- etching at least a portion of the pre-storage node contact layer;
- forming a first pre-insulation pattern layer over a region where the pre-storage node contact layer is etched;
- forming a second pre-insulation pattern layer over the first pre-insulation pattern layer;
- and
- forming an insulation pattern by etching at least a portion of each of the first pre-insulation pattern layer and the second pre-insulation pattern layer.
A method for manufacturing a semiconductor device, the method comprising:
- forming a pre-storage node contact layer over first and second active regions;
- forming a first storage node contact covering the first active region and a second storage node contact covering a portion of the second active region by etching at least a portion of the pre-storage node contact layer;
- and
- forming a first pre-insulation pattern layer covering the first and second storage node contacts,
- wherein the first pre-insulation pattern layer contacts the second active region,
- wherein the first pre-insulation pattern layer includes silicon oxide.
Dependencies are inferred from the claim text.