H01J 2237/08
Ion sources
H01J2237/08 (Ion sources) appears on 1,048 US grants and 1,081 published applications in this corpus.
Search patents in H01J- Granted patents
- 1,048
- Published applications
- 1,081
- Assignees
- 308
- Inventors
- 1,660
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 5 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 4 | 0 |
| 1991 | 4 | 0 |
| 1992 | 5 | 0 |
| 1993 | 4 | 0 |
| 1994 | 8 | 0 |
| 1995 | 6 | 0 |
| 1996 | 14 | 0 |
| 1997 | 7 | 0 |
| 1998 | 10 | 0 |
| 1999 | 10 | 0 |
| 2000 | 9 | 0 |
| 2001 | 12 | 12 |
| 2002 | 16 | 31 |
| 2003 | 22 | 25 |
| 2004 | 21 | 27 |
| 2005 | 21 | 28 |
| 2006 | 27 | 33 |
| 2007 | 22 | 58 |
| 2008 | 34 | 50 |
| 2009 | 42 | 92 |
| 2010 | 60 | 67 |
| 2011 | 47 | 57 |
| 2012 | 55 | 55 |
| 2013 | 62 | 58 |
| 2014 | 61 | 56 |
| 2015 | 60 | 68 |
| 2016 | 56 | 53 |
| 2017 | 49 | 38 |
| 2018 | 28 | 46 |
| 2019 | 58 | 37 |
| 2020 | 46 | 43 |
| 2021 | 41 | 32 |
| 2022 | 25 | 34 |
| 2023 | 29 | 26 |
| 2024 | 27 | 24 |
| 2025 | 21 | 20 |
| 2026 | 8 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Ion source containing a sputter target25 Aug 2026US 12,719,007 B2APPLIED Materials.Inc.
- Ion generation device and ion implanter18 Aug 2026US 12,712,144 B2Sumitomo Heavy Industries Ion Technology Co., Ltd.
- Ion microscope14 Jul 2026US 12,683,113 B2National University of Singapore
- Mixed-gas species plasma source system21 Apr 2026US 12,609,276 B2FEI Company
- Systems and methods for aluminum ion beam generation source technology24 Mar 2026US 12,586,756 B2II-Vi Delaware, Inc.
- Non-uniform subsrate processing using a scanned spot ion beam10 Sep 2026US 2026/0269168 A1APPLIED Materials.Inc.
- Insulator, Charged Particle Gun, and Charged Particle Beam Device6 Aug 2026US 2026/0229440 A1Hitachi High-Tech Corporation
- Ion generation apparatus9 Jul 2026US 2026/0196437 A1Fidelity semiconductor CORPORATION
- Gas cluster ion beam apparatus4 Jun 2026US 2026/0155330 A1IIPT Inc.
- Sputter deposition source, magnetron sputter cathode, and method of depositing a material on a substrate28 May 2026US 2026/0146315 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Neutral beam-assisted atomic layer chemical vapor deposition apparatus and method of processing substrate using the same425US 7,799,706 B2Sungkyunkwan University Foundation for Corporate Collaboration · 2010
- Ion source having auxillary ion chamber423US 5,107,170 ANissin Electric Co., Ltd. · 1992
- Beam processing apparatus350US 6,849,857 B2Ebara Corporation · 2005
- Method for implanting negative hydrogen ion and implanting apparatus190US 6,335,535 B12002
- Plasma generating apparatus for large area plasma processing135US 5,032,202 AMartin Marietta Energy Systems, Inc. · 1991