Ion source containing a sputter target
AssigneeApplied Materials, Inc.
InventorGraham Wright
Life of this patent
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Abstract
An ion source with a sputter target located at the end of the ion source is disclosed. The ion source may include an indirectly heated cathode and the sputter target may be disposed on the end opposite the cathode. The ion source may contain one or more side electrodes, wherein at least one of these electrodes is electrically biased relative to the arc chamber. In one embodiment, the second end of the ion source is made of a dopant containing material and serves as the sputter target. In another embodiment, there is an opening in the second end, and an insert is disposed in this opening. The insert is made of a dopant containing material and serves as the sputter target.
Claims16
An indirectly heated cathode (IHC) ion source to create an ion beam comprising a dopant species, wherein the dopant species is aluminum, comprising:
- an arc chamber, comprising a plurality of electrically conductive side walls connecting a first end and a second end;
- an indirectly heated cathode disposed on the first end of the arc chamber;
- an electrode disposed on one of the plurality of electrically conductive side walls, wherein a voltage is applied to the electrode relative to a voltage applied to the plurality of electrically conductive side walls of the arc chamber;
- and
- wherein the second end is electrically connected to the side walls and an entirety of the second end is made of a dopant containing material, wherein the dopant containing material is a ceramic containing aluminum or an aluminum alloy.
An indirectly heated cathode (IHC) ion source to generate an ion beam comprising a dopant species, comprising:
- an arc chamber, comprising a plurality of electrically conductive side walls connecting a first end and a second end;
- an indirectly heated cathode disposed on the first end of the arc chamber;
- an electrode disposed on one of the plurality of electrically conductive side walls, wherein a voltage is applied to the electrode relative to a voltage applied to the plurality of electrically conductive side walls of the arc chamber;
- and
- wherein an opening is disposed in the second end, and an insert made from a dopant containing material is disposed in the opening and electrically connected to the second end, wherein the insert is configured to be extended into the arc chamber as it is consumed by a plasma in the arc chamber.
Dependencies are inferred from the claim text.