Ion generation apparatus
AssigneeFidelity semiconductor CORPORATION
InventorsCHIH MING CHEN, KUO CHAN HUANG
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AssigneeFidelity semiconductor CORPORATION
InventorsCHIH MING CHEN, KUO CHAN HUANG
Estimating the term…
An ion generation device apparatus is provided, comprising: an arc chamber housing, forming an ion source arc chamber; a thermionic emitter, comprising a filament and a cathode positioned at an end of the ion source arc chamber; and a guide member, positioned around the cathode to form a guide channel, wherein a top end surface of the guide member protrudes higher than an upper surface of the cathode, wherein at least two gas inlets positioned on the ion source arc chamber are correspondingly and symmetrically positioned on two sides of a central extension line of the cathode, to more evenly provide a source gas to the ion source arc chamber. In addition, electrons are enabled to move as far as possible to the gas inlets by using the guide member, thereby increasing an opportunity that the electrons react with the gas.
An ion generation device apparatus, comprising:
Dependencies are inferred from the claim text.